IXYS
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
IXFN100N10S2
詳細を表示 DataSheets

IXFN100N10S2

Product Overview

Category: Power MOSFET
Use: High power switching applications
Characteristics: High voltage, high current capability
Package: TO-268
Essence: Power efficiency and reliability
Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

  • Voltage Rating: 1000V
  • Current Rating: 100A
  • RDS(on): 0.009 ohms
  • Gate Threshold Voltage: 4V
  • Maximum Power Dissipation: 625W

Detailed Pin Configuration

The IXFN100N10S2 features a standard TO-268 pin configuration with three pins: gate, drain, and source.

Functional Features

  • Low on-state resistance
  • Fast switching speed
  • High input impedance
  • Low gate charge

Advantages and Disadvantages

Advantages: - High power handling capability - Low conduction losses - Suitable for high frequency applications

Disadvantages: - Higher cost compared to traditional MOSFETs - Sensitive to static electricity

Working Principles

The IXFN100N10S2 operates based on the principle of field-effect transistors, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal.

Detailed Application Field Plans

This MOSFET is commonly used in high-power applications such as: - Switched-mode power supplies - Motor control - Renewable energy systems - Electric vehicle powertrains

Detailed and Complete Alternative Models

  1. IXFN120N20

    • Voltage Rating: 1200V
    • Current Rating: 120A
    • RDS(on): 0.008 ohms

  2. IXFN90N30

    • Voltage Rating: 900V
    • Current Rating: 90A
    • RDS(on): 0.011 ohms

  3. IXFN80N25

    • Voltage Rating: 800V
    • Current Rating: 80A
    • RDS(on): 0.013 ohms

In conclusion, the IXFN100N10S2 is a high-performance power MOSFET suitable for demanding high-power switching applications, offering excellent efficiency and reliability.

(Word count: 298)

技術ソリューションにおける IXFN100N10S2 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum drain-source voltage of IXFN100N10S2?

    • The maximum drain-source voltage of IXFN100N10S2 is 100V.

  2. What is the continuous drain current rating of IXFN100N10S2?

    • The continuous drain current rating of IXFN100N10S2 is 100A.

  3. What is the on-state resistance (RDS(on)) of IXFN100N10S2?

    • The on-state resistance (RDS(on)) of IXFN100N10S2 is typically 10mΩ.

  4. Can IXFN100N10S2 be used in high-power applications?

    • Yes, IXFN100N10S2 is suitable for high-power applications due to its high current and voltage ratings.

  5. What type of package does IXFN100N10S2 come in?

    • IXFN100N10S2 comes in a TO-268 package.

  6. Is IXFN100N10S2 suitable for motor control applications?

    • Yes, IXFN100N10S2 is commonly used in motor control applications due to its high current handling capability.

  7. Does IXFN100N10S2 require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required for optimal performance of IXFN100N10S2.

  8. What are the typical applications of IXFN100N10S2?

    • Typical applications of IXFN100N10S2 include motor drives, inverters, power supplies, and welding equipment.

  9. What is the gate threshold voltage of IXFN100N10S2?

    • The gate threshold voltage of IXFN100N10S2 is typically around 4V.

  10. Is IXFN100N10S2 suitable for use in automotive electronics?

    • Yes, IXFN100N10S2 is suitable for use in automotive electronics, particularly in power management and motor control systems.