IRF6614TR1
Product Overview
Category: Power MOSFET
Use: Switching applications
Characteristics: High voltage, low on-resistance
Package: D2PAK
Essence: Power management
Packaging/Quantity: Tape & Reel, 800 units
Specifications
- Voltage Rating: 100V
- Continuous Drain Current: 23A
- On-Resistance: 0.028 ohm
- Gate Threshold Voltage: 2V to 4V
- Power Dissipation: 2.5W
Detailed Pin Configuration
The IRF6614TR1 has a standard D2PAK pin configuration with three pins: Gate (G), Drain (D), and Source (S).
Functional Features
- Low on-resistance for efficient power management
- High voltage rating for versatile applications
- Fast switching speed for improved performance
Advantages
- High voltage rating allows for use in various applications
- Low on-resistance minimizes power loss
- Fast switching speed enhances efficiency
Disadvantages
- Higher cost compared to lower voltage MOSFETs
- Larger package size may not be suitable for compact designs
Working Principles
The IRF6614TR1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage is applied, it creates an electric field that modulates the conductivity of the channel, allowing for efficient switching and control of power flow.
Detailed Application Field Plans
The IRF6614TR1 is well-suited for a wide range of applications including: - Power supplies - Motor control - DC-DC converters - Inverters
Detailed and Complete Alternative Models
- IRF6614: Similar specifications and package, non-tape & reel packaging
- IRF6614PBF: Lead-free version of IRF6614TR1, same specifications and package
In conclusion, the IRF6614TR1 is a high-voltage power MOSFET designed for efficient power management in various applications. Its low on-resistance, high voltage rating, and fast switching speed make it a versatile choice for power electronics design.
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技術ソリューションにおける IRF6614TR1 の適用に関連する 10 件の一般的な質問と回答をリストします。
What is the IRF6614TR1?
- The IRF6614TR1 is a power MOSFET designed for use in various technical solutions, particularly in power management and switching applications.
What is the maximum voltage rating of the IRF6614TR1?
- The maximum voltage rating of the IRF6614TR1 is typically around 100V, making it suitable for medium to high voltage applications.
What is the maximum current rating of the IRF6614TR1?
- The IRF6614TR1 has a maximum continuous drain current rating of several amperes, making it suitable for high-power applications.
What are the typical applications of the IRF6614TR1?
- The IRF6614TR1 is commonly used in applications such as motor control, power supplies, DC-DC converters, and other power management solutions.
What is the on-resistance of the IRF6614TR1?
- The on-resistance of the IRF6614TR1 is relatively low, typically in the milliohm range, which makes it efficient for power switching applications.
What is the gate-source voltage range for the IRF6614TR1?
- The gate-source voltage range for the IRF6614TR1 is typically around ±20V, allowing for compatibility with a wide range of control circuits.
Does the IRF6614TR1 require a heat sink for operation?
- Depending on the application and power dissipation, the IRF6614TR1 may require a heat sink to maintain optimal operating temperatures.
Is the IRF6614TR1 suitable for high-frequency switching applications?
- The IRF6614TR1 is designed for medium to low frequency switching applications and may not be ideal for high-frequency operations.
What are the thermal characteristics of the IRF6614TR1?
- The IRF6614TR1 has specific thermal resistance values that should be considered for proper heat dissipation in the application.
Are there any recommended driver circuits for the IRF6614TR1?
- It is recommended to use appropriate gate driver circuits to ensure efficient and reliable operation of the IRF6614TR1 in technical solutions.