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IPG20N10S4L35ATMA1
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IPG20N10S4L35ATMA1

Product Overview

Category

The IPG20N10S4L35ATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as in power supplies, motor control, and lighting systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPG20N10S4L35ATMA1 is typically available in a TO-220 package.

Essence

This MOSFET is designed to efficiently handle high power levels while minimizing power loss.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 20A
  • On-Resistance (RDS(on)): 35mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 38nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPG20N10S4L35ATMA1 typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and heat generation.
  • Fast switching speed enables efficient power management.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher gate charge compared to some alternative models
  • Limited operating temperature range

Working Principles

The IPG20N10S4L35ATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications, including: - Power supply units - Motor control systems - LED lighting drivers - Inverters

Detailed and Complete Alternative Models

Some alternative models to the IPG20N10S4L35ATMA1 include: - IRF540N - FDP8870 - STP16NF06L

In conclusion, the IPG20N10S4L35ATMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management applications.

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技術ソリューションにおける IPG20N10S4L35ATMA1 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum drain-source voltage of IPG20N10S4L35ATMA1?

    • The maximum drain-source voltage is 100V.

  2. What is the continuous drain current rating of IPG20N10S4L35ATMA1?

    • The continuous drain current rating is 20A.

  3. What is the on-state resistance (RDS(on)) of IPG20N10S4L35ATMA1?

    • The on-state resistance is typically 35mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IPG20N10S4L35ATMA1?

    • The gate threshold voltage is typically 2.5V.

  5. What is the power dissipation of IPG20N10S4L35ATMA1?

    • The power dissipation is 62.5W.

  6. What are the recommended operating temperature range for IPG20N10S4L35ATMA1?

    • The recommended operating temperature range is -55°C to 175°C.

  7. Is IPG20N10S4L35ATMA1 suitable for high-frequency switching applications?

    • Yes, it is suitable for high-frequency switching applications.

  8. Does IPG20N10S4L35ATMA1 have built-in ESD protection?

    • Yes, it has built-in ESD protection.

  9. What type of package does IPG20N10S4L35ATMA1 come in?

    • It comes in a TO-220AB package.

  10. Is IPG20N10S4L35ATMA1 RoHS compliant?

    • Yes, it is RoHS compliant.