onsemi (Ansemi)
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NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
部品番号
NCP5106BDR2G
カテゴリー
Power Chip > Gate Driver IC
メーカー/ブランド
onsemi (Ansemi)
カプセル化
SOIC-8-150mil
パッキング
taping
パッケージの数
2500
説明
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
リクエスト引用
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在庫あり 75348 PCS
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のキーワード NCP5106BDR2G
NCP5106BDR2G 電子部品
NCP5106BDR2G 売上
NCP5106BDR2G サプライヤー
NCP5106BDR2G ディストリビュータ
NCP5106BDR2G データテーブル
NCP5106BDR2Gの写真
NCP5106BDR2G 価格
NCP5106BDR2G オファー
NCP5106BDR2G 最安値
NCP5106BDR2G 検索
NCP5106BDR2G を購入中
NCP5106BDR2G チップ