W25Q128FVPIF

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, low power consumption
• Package: SOP-16 (Small Outline Package)
• Essence: Non-volatile memory for storing digital information
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 128 Megabits (16 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Read Speed: Up to 104 MHz
• Write Speed: Up to 80 MHz
• Erase Time: Sector erase time of 150 ms, block erase time of 400 ms
• Data Retention: Up to 20 years
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The W25Q128FVPIF has a total of 16 pins arranged as follows:

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Hold (/HOLD)
6. Write Protect (/WP)
7. Ground (GND)
8. VCC Power Supply (VCC)
9. Reset (RESET)
10. NC (No Connection)
11. NC (No Connection)
12. NC (No Connection)
13. NC (No Connection)
14. NC (No Connection)
15. NC (No Connection)
16. NC (No Connection)

Functional Features

• High-speed data transfer using SPI interface
• Flexible erase and program operations at the sector or block level
• Efficient power management with low power consumption
• Wide operating temperature range for various environments
• Reliable data retention for long-term storage

Advantages and Disadvantages

Advantages: - Large memory capacity for storing substantial amounts of data - Fast read/write speeds enable quick access to stored information - Low power consumption prolongs battery life in portable devices - Compact package size allows for easy integration into electronic devices

Disadvantages: - Limited compatibility with devices that do not support SPI interface - Relatively slower erase times compared to other flash memory technologies - Higher cost per unit compared to lower capacity flash memory options

Working Principles

The W25Q128FVPIF operates based on the principles of flash memory technology. It utilizes a floating gate transistor structure to store digital information. The memory cells are organized into sectors and blocks, which can be individually erased or programmed. Data is written by applying high voltages to the appropriate memory cells, while erasing is achieved by removing the charge from the cells.

Detailed Application Field Plans

The W25Q128FVPIF is widely used in various electronic devices that require non-volatile memory for data storage and retrieval. Some common application fields include:

1. Consumer Electronics: Smartphones, tablets, digital cameras, gaming consoles
2. Automotive: Infotainment systems, navigation systems, instrument clusters
3. Industrial: Embedded systems, control units, data loggers
4. Communication: Routers, modems, network switches
5. Medical: Patient monitoring devices, medical imaging equipment

Detailed and Complete Alternative Models

1. W25Q64FVPIF: 64 Megabit (8 Megabyte) capacity variant of the same series
2. W25Q256FVPIF: 256 Megabit (32 Megabyte) capacity variant of the same series
3. MX25L12845EMI-10G: 128 Megabit (16 Megabyte) flash memory with similar specifications
4. S25FL128SAGMFI011: 128 Megabit (16 Megabyte) flash memory with similar specifications

(Note: The above alternative models are provided for reference and may vary in terms of specific features and compatibility.)

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