PHE13007,127
Product Category: Power Transistor
Basic Information Overview:
- Category: Power transistor
- Use: Amplification and switching of electrical signals in power applications
- Characteristics: High voltage and current capability, low saturation voltage, fast switching speed
- Package: TO-220AB
- Essence: Silicon NPN power transistor
- Packaging/Quantity: Bulk packaging, quantity varies by supplier
Specifications:
- Voltage - Collector Emitter Breakdown (Max): 700V
- Current - Collector (Ic) (Max): 8A
- Power - Max: 80W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 4V
- Frequency - Transition: 4MHz
Detailed Pin Configuration:
- Base (B)
- Collector (C)
- Emitter (E)
Functional Features:
- High voltage capability
- Low collector-emitter saturation voltage
- Fast switching speed
- Good linearity of hFE
Advantages:
- Suitable for high power applications
- Low saturation voltage reduces power dissipation
- Fast switching speed allows for efficient operation
Disadvantages:
- Higher cost compared to lower power transistors
- Requires careful handling due to high voltage capability
Working Principles:
The PHE13007,127 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between the collector and emitter terminals through the base terminal.
Detailed Application Field Plans:
- Switching power supplies
- Electronic ballasts
- Motor control
- Inverters
Detailed and Complete Alternative Models:
- PHE13005,127
- PHE13009,127
- MJE13007
This comprehensive entry provides a detailed overview of the PHE13007,127 power transistor, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
技術ソリューションにおける PHE13007,127 の適用に関連する 10 件の一般的な質問と回答をリストします。
What is PHE13007,127?
- PHE13007,127 is a high voltage NPN transistor commonly used in electronic circuits for switching and amplification purposes.
What are the typical applications of PHE13007,127?
- PHE13007,127 is commonly used in power supply circuits, electronic ballasts, and other technical solutions requiring high voltage switching and amplification.
What are the key specifications of PHE13007,127?
- The key specifications include a high voltage rating, high current capability, and low saturation voltage, making it suitable for power applications.
How do I properly bias PHE13007,127 in a circuit?
- Proper biasing involves ensuring the base-emitter junction is forward biased and the collector-base junction is reverse biased to allow for proper amplification and switching.
Can PHE13007,127 be used in audio amplifier circuits?
- Yes, PHE13007,127 can be used in audio amplifier circuits, especially in applications where high voltage and power handling capabilities are required.
What are the common failure modes of PHE13007,127?
- Common failure modes include thermal runaway due to inadequate heat sinking, overvoltage stress leading to breakdown, and excessive current causing damage.
How do I calculate the power dissipation for PHE13007,127 in a given circuit?
- Power dissipation can be calculated using the formula P = Vce * Ic, where Vce is the collector-emitter voltage and Ic is the collector current.
Are there any recommended alternative transistors to PHE13007,127?
- Yes, alternatives such as MJE13007, TIP127, and 2SC5200 can be considered based on specific application requirements.
What precautions should be taken when soldering PHE13007,127 onto a PCB?
- Precautions include using an appropriate soldering iron temperature, avoiding prolonged heating to prevent damage, and ensuring proper ESD protection.
Where can I find detailed application notes and reference designs for PHE13007,127?
- Detailed application notes and reference designs can often be found in the manufacturer's datasheet, application guides, and technical forums dedicated to electronic components.