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SQD50N04-5M6L_GE3
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SQD50N04-5M6L_GE3

Product Overview

Category

The SQD50N04-5M6L_GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as in power supplies, motor control, and other high-power switching circuits.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SQD50N04-5M6L_GE3 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 50A
  • RDS(ON) (Max) @ VGS = 10V: 5.6mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 35nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The pin configuration of the SQD50N04-5M6L_GE3 includes three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • Low on-resistance for minimal power dissipation
  • High current-carrying capability
  • Fast switching speed for improved efficiency
  • Enhanced thermal performance

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Suitable for high-power applications

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The SQD50N04-5M6L_GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SQD50N04-5M6L_GE3 is well-suited for use in the following applications: - Power supplies - Motor control systems - High-power switching circuits - Inverters

Detailed and Complete Alternative Models

Some alternative models to the SQD50N04-5M6L_GE3 include: - IRF540N - FDP8870 - STP55NF06L

In conclusion, the SQD50N04-5M6L_GE3 power MOSFET offers high-performance characteristics suitable for various power management applications, with its low on-resistance, high current-carrying capability, and fast switching speed making it an ideal choice for demanding electronic systems.

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技術ソリューションにおける SQD50N04-5M6L_GE3 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum drain-source voltage of SQD50N04-5M6L_GE3?

    • The maximum drain-source voltage of SQD50N04-5M6L_GE3 is 40V.

  2. What is the continuous drain current rating of SQD50N04-5M6L_GE3?

    • The continuous drain current rating of SQD50N04-5M6L_GE3 is 50A.

  3. What is the on-resistance of SQD50N04-5M6L_GE3?

    • The on-resistance of SQD50N04-5M6L_GE3 is typically 5.6mΩ.

  4. What is the gate threshold voltage of SQD50N04-5M6L_GE3?

    • The gate threshold voltage of SQD50N04-5M6L_GE3 is typically 2V.

  5. Is SQD50N04-5M6L_GE3 suitable for high-frequency applications?

    • Yes, SQD50N04-5M6L_GE3 is suitable for high-frequency applications due to its low on-resistance.

  6. What is the operating temperature range of SQD50N04-5M6L_GE3?

    • The operating temperature range of SQD50N04-5M6L_GE3 is -55°C to 175°C.

  7. Can SQD50N04-5M6L_GE3 be used in automotive applications?

    • Yes, SQD50N04-5M6L_GE3 is designed for automotive applications and meets AEC-Q101 standards.

  8. Does SQD50N04-5M6L_GE3 have built-in protection features?

    • SQD50N04-5M6L_GE3 has built-in overcurrent and thermal protection features.

  9. What is the package type of SQD50N04-5M6L_GE3?

    • SQD50N04-5M6L_GE3 comes in a Power-SO8 package.

  10. Is SQD50N04-5M6L_GE3 RoHS compliant?

    • Yes, SQD50N04-5M6L_GE3 is RoHS compliant, making it suitable for environmentally friendly designs.