SQD50N04-4M5L_GE3

Product Overview

Category

The SQD50N04-4M5L_GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits and power management applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The SQD50N04-4M5L_GE3 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

• Drain-Source Voltage (VDS): 40V
• Continuous Drain Current (ID): 50A
• RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
• Gate-Source Voltage (VGS) ±20V
• Total Gate Charge (Qg): 28nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The pin configuration of SQD50N04-4M5L_GE3 includes three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for minimal power dissipation
• High current-carrying capability
• Suitable for high-frequency switching applications

Advantages

• Efficient power management
• Reduced heat generation
• Fast response time

Disadvantages

• Sensitive to static electricity
• Requires careful handling during installation

Working Principles

The SQD50N04-4M5L_GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switching power supplies - Motor control - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to SQD50N04-4M5L_GE3 include: - IRF540N - FDP8878 - STP55NF06L

In conclusion, the SQD50N04-4M5L_GE3 power MOSFET offers high performance and reliability in various power management applications, making it an essential component in modern electronic systems.

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