SIHH11N60E-T1-GE3

Product Overview

Category

The SIHH11N60E-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching circuits.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge
• Avalanche energy specified
• RoHS compliant

Package

The SIHH11N60E-T1-GE3 comes in a TO-220AB package.

Essence

This MOSFET is designed to handle high power and high voltage applications efficiently.

Packaging/Quantity

It is typically packaged in reels with a quantity of 800 units per reel.

Specifications

• Drain-Source Voltage (VDS): 600V
• Continuous Drain Current (ID): 11A
• On-Resistance (RDS(on)): 0.65Ω
• Power Dissipation (PD): 80W
• Gate-Source Voltage (VGS): ±30V
• Operating Junction Temperature (TJ): -55°C to 150°C

Detailed Pin Configuration

The SIHH11N60E-T1-GE3 has a standard TO-220AB pin configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features

• High voltage capability allows for use in various power applications.
• Low on-resistance minimizes power loss and improves efficiency.
• Fast switching speed enables rapid response in switching circuits.
• Low gate charge reduces drive requirements and enhances performance.

Advantages and Disadvantages

Advantages

• Suitable for high-power applications
• Efficient power handling
• Fast switching speed

Disadvantages

• Relatively higher on-resistance compared to some alternative models
• May require additional heat dissipation in high-power applications

Working Principles

The SIHH11N60E-T1-GE3 operates based on the principles of field-effect transistors, utilizing its high voltage capability and low on-resistance to control the flow of power in various circuits.

Detailed Application Field Plans

Power Supply Applications

The MOSFET can be used in AC-DC and DC-DC power supplies due to its high voltage capability and low on-resistance.

Motor Control

Its fast switching speed makes it suitable for motor control applications, providing efficient power handling and control.

High-Power Switching Circuits

In high-power switching circuits, the MOSFET's characteristics enable reliable and efficient power switching.

Detailed and Complete Alternative Models

• IRFH5300PbF
• FDPF18N50T
• IPP60R190C6

In conclusion, the SIHH11N60E-T1-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various power applications such as power supplies, motor control, and high-power switching circuits.

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