SI8802DB-T2-E1

Product Overview

Category

The SI8802DB-T2-E1 belongs to the category of high-speed, low-side gate drivers.

Use

It is used for driving N-channel enhancement mode power MOSFETs in a variety of applications such as motor control, power supplies, and DC-DC converters.

Characteristics

• High-speed switching capability
• Low input capacitance
• Wide operating voltage range
• Integrated under-voltage lockout protection
• Over-temperature shutdown feature

Package

The SI8802DB-T2-E1 comes in a compact and efficient DFN-8 package.

Essence

The essence of this product lies in its ability to provide reliable and efficient drive signals to power MOSFETs, enabling precise control of power electronics systems.

Packaging/Quantity

The SI8802DB-T2-E1 is typically packaged in reels containing 2500 units per reel.

Specifications

• Operating Voltage Range: 4.5V to 18V
• Maximum Output Current: 4A
• Propagation Delay: 15ns
• Rise/Fall Time: 10ns
• Operating Temperature Range: -40°C to 125°C

Detailed Pin Configuration

The SI8802DB-T2-E1 features a standard 8-pin configuration with specific pins dedicated to input, output, and power connections. The pinout is as follows: 1. VDD (Power Supply) 2. IN (Input Signal) 3. GND (Ground) 4. LO (Low-Side Gate Driver Output) 5. COM (Common Connection) 6. NC (No Connection) 7. NC (No Connection) 8. VB (Bootstrap Voltage)

Functional Features

• High-speed switching for rapid response in power control applications
• Integrated under-voltage lockout for enhanced system reliability
• Over-temperature shutdown protection for thermal management
• Bootstrap voltage supply for efficient gate driving

Advantages and Disadvantages

Advantages

• Fast switching capability improves system efficiency
• Integrated protection features enhance system reliability
• Wide operating voltage range allows for versatile application

Disadvantages

• Limited to driving N-channel enhancement mode power MOSFETs
• Requires external bootstrap capacitor for proper operation

Working Principles

The SI8802DB-T2-E1 operates by receiving input signals and generating corresponding drive signals to control the conduction of N-channel power MOSFETs. It utilizes internal circuitry to manage voltage levels, timing, and protection functions to ensure safe and efficient operation.

Detailed Application Field Plans

The SI8802DB-T2-E1 is well-suited for various applications including: - Motor Control: Enables precise and responsive control of motor speed and direction. - Power Supplies: Facilitates efficient power conversion and regulation. - DC-DC Converters: Supports efficient voltage conversion in diverse power electronics systems.

Detailed and Complete Alternative Models

Some alternative models to the SI8802DB-T2-E1 include: - SI8801DB-T2-E1: Similar specifications with lower output current capability - SI8803DB-T2-E1: Higher output current capability with slightly different pin configuration - SI8804DB-T2-E1: Enhanced features for specific application requirements

In conclusion, the SI8802DB-T2-E1 offers high-speed, reliable, and efficient drive capabilities for N-channel power MOSFETs, making it an ideal choice for a wide range of power electronics applications.

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