SI7964DP-T1-GE3

Product Category: Power MOSFET

Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: DFN (Dual Flat No-Lead) - Essence: Advanced power management solution - Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications: - Voltage Rating: 30V - Continuous Drain Current: 120A - RDS(ON): 1.6mΩ - Gate Charge: 50nC - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Drain

Functional Features: - Low on-resistance for high efficiency - Fast switching speed for improved performance - Enhanced power management capabilities

Advantages: - High efficiency - Low on-resistance - Fast switching speed - Reliable power management solution

Disadvantages: - Sensitive to static electricity - Requires careful handling during installation

Working Principles: The SI7964DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently manage power flow in various applications.

Detailed Application Field Plans: - DC-DC converters - Motor control systems - Power supplies - Battery management systems

Detailed and Complete Alternative Models: - SI7856DP-T1-GE3 - SI7021DP-T1-GE3 - SI8432DP-T1-GE3

This comprehensive entry provides a detailed overview of the SI7964DP-T1-GE3 Power MOSFET, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.