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SI5933DC-T1-GE3

SI5933DC-T1-GE3

Product Overview

Category

The SI5933DC-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

  • Low on-resistance
  • High current-carrying capability
  • Fast switching speed
  • Low gate charge

Package

The SI5933DC-T1-GE3 is typically available in a compact and efficient PowerPAK® package.

Essence

This MOSFET is designed to provide high performance and reliability in power management applications.

Packaging/Quantity

It is usually supplied in reels with a specific quantity per reel, typically 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 80A
  • RDS(ON) (Max) @ VGS = 10V: 2.5mΩ
  • Gate-Source Voltage (VGS) (Max): ±20V
  • Total Gate Charge (Qg): 38nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI5933DC-T1-GE3 typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • Low on-resistance for minimal power dissipation
  • High current-carrying capability for efficient power handling
  • Fast switching speed for improved system response
  • Low gate charge for reduced drive requirements

Advantages and Disadvantages

Advantages

  • High efficiency
  • Enhanced thermal performance
  • Compact form factor

Disadvantages

  • Sensitive to static discharge
  • Requires careful handling during assembly

Working Principles

The SI5933DC-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

This MOSFET is well-suited for a wide range of power management applications, including: - DC-DC converters - Motor control - Battery management systems - LED lighting - Power supplies

Detailed and Complete Alternative Models

Some alternative models to the SI5933DC-T1-GE3 include: - SI5944DC-T1-GE3 - SI7856DC-T1-GE3 - SI8899DC-T1-GE3

In conclusion, the SI5933DC-T1-GE3 power MOSFET offers high-performance characteristics and is suitable for various power management applications, providing efficient power handling and fast switching capabilities.

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技術ソリューションにおける SI5933DC-T1-GE3 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum operating temperature of SI5933DC-T1-GE3?

    • The maximum operating temperature of SI5933DC-T1-GE3 is 150°C.
  2. What is the typical input voltage range for SI5933DC-T1-GE3?

    • The typical input voltage range for SI5933DC-T1-GE3 is 4.5V to 60V.
  3. What is the output current capability of SI5933DC-T1-GE3?

    • SI5933DC-T1-GE3 has an output current capability of up to 3A.
  4. Does SI5933DC-T1-GE3 have built-in overcurrent protection?

    • Yes, SI5933DC-T1-GE3 features built-in overcurrent protection.
  5. What is the typical efficiency of SI5933DC-T1-GE3?

    • The typical efficiency of SI5933DC-T1-GE3 is around 95%.
  6. Can SI5933DC-T1-GE3 be used in automotive applications?

    • Yes, SI5933DC-T1-GE3 is suitable for automotive applications.
  7. Does SI5933DC-T1-GE3 require external compensation components?

    • No, SI5933DC-T1-GE3 does not require external compensation components.
  8. What is the package type of SI5933DC-T1-GE3?

    • SI5933DC-T1-GE3 comes in a compact DFN package.
  9. Is SI5933DC-T1-GE3 RoHS compliant?

    • Yes, SI5933DC-T1-GE3 is RoHS compliant.
  10. What are the typical application scenarios for SI5933DC-T1-GE3?

    • SI5933DC-T1-GE3 is commonly used in industrial power supplies, automotive electronics, and LED lighting applications.