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SI5915DC-T1-GE3
Introduction
The SI5915DC-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Switching and amplification in electronic circuits
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: DFN (Dual Flat No-Lead)
- Essence: Efficient power management and control
- Packaging/Quantity: Available in tape and reel packaging, quantity varies based on supplier
Specifications
- Voltage Rating: 150V
- Current Rating: 30A
- On-Resistance: 9.5mΩ
- Gate Threshold Voltage: 2.5V
- Operating Temperature Range: -55°C to 175°C
- Package Type: DFN-8 (3x3)
Detailed Pin Configuration
The SI5915DC-T1-GE3 features a DFN-8 package with the following pin configuration:
1. Gate
2. Source
3. Source
4. Drain
5. Drain
6. Source
7. Source
8. Gate
Functional Features
- High Voltage Capability: Suitable for high voltage applications
- Low On-Resistance: Minimizes power loss and heat generation
- Fast Switching Speed: Enables efficient circuit operation
Advantages and Disadvantages
Advantages
- Efficient power management
- Low power dissipation
- Fast response time
Disadvantages
- Sensitivity to voltage spikes
- Limited current handling capacity
Working Principles
The SI5915DC-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a voltage is applied to the gate terminal, it controls the flow of current between the source and drain terminals, enabling switching and amplification functions.
Detailed Application Field Plans
The SI5915DC-T1-GE3 finds extensive application in various fields including:
- Power supplies
- Motor control
- LED lighting
- Battery management systems
- Audio amplifiers
Detailed and Complete Alternative Models
- SI5946DC-T1-GE3: Similar specifications with enhanced current handling capacity
- SI5935DC-T1-GE3: Lower voltage rating with comparable on-resistance
- SI5920DC-T1-GE3: Higher voltage capability with slightly higher on-resistance
In conclusion, the SI5915DC-T1-GE3 power MOSFET offers efficient power management and control capabilities, making it an essential component in numerous electronic applications.
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技術ソリューションにおける SI5915DC-T1-GE3 の適用に関連する 10 件の一般的な質問と回答をリストします。
What is the maximum voltage rating for SI5915DC-T1-GE3?
- The maximum voltage rating for SI5915DC-T1-GE3 is 20V.
What is the typical input capacitance of SI5915DC-T1-GE3?
- The typical input capacitance of SI5915DC-T1-GE3 is 1500pF.
What is the maximum continuous drain current for SI5915DC-T1-GE3?
- The maximum continuous drain current for SI5915DC-T1-GE3 is 6A.
What is the typical threshold voltage for SI5915DC-T1-GE3?
- The typical threshold voltage for SI5915DC-T1-GE3 is 1.1V.
What is the operating temperature range for SI5915DC-T1-GE3?
- The operating temperature range for SI5915DC-T1-GE3 is -55°C to 150°C.
What is the typical on-resistance for SI5915DC-T1-GE3?
- The typical on-resistance for SI5915DC-T1-GE3 is 7mΩ.
Is SI5915DC-T1-GE3 suitable for automotive applications?
- Yes, SI5915DC-T1-GE3 is suitable for automotive applications.
Does SI5915DC-T1-GE3 have overcurrent protection?
- Yes, SI5915DC-T1-GE3 features overcurrent protection.
What is the package type for SI5915DC-T1-GE3?
- SI5915DC-T1-GE3 comes in a PowerPAK® SO-8 package.
Is SI5915DC-T1-GE3 RoHS compliant?
- Yes, SI5915DC-T1-GE3 is RoHS compliant.