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SI5906DU-T1-GE3

SI5906DU-T1-GE3

Product Overview

Category

The SI5906DU-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate drive requirements

Package

The SI5906DU-T1-GE3 is typically available in a compact and industry-standard PowerPAK® SO-8 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels with a standard quantity per reel, typically 3000 units.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 25A
  • RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
  • Gate-Source Voltage (VGS) (Max): ±20V
  • Total Gate Charge (Qg): 15nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI5906DU-T1-GE3 features a standard SO-8 pin configuration: 1. Source 2. Gate 3. Drain 4. N/C 5. N/C 6. Drain 7. Gate 8. Source

Functional Features

  • Low on-resistance for minimal power dissipation
  • High current handling capability for power applications
  • Fast switching speed for efficient operation
  • Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Compact package size
  • Suitable for high-current applications

Disadvantages

  • Sensitive to static discharge
  • Requires careful handling during assembly

Working Principles

The SI5906DU-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching characteristics to regulate and control power flow within electronic circuits.

Detailed Application Field Plans

The SI5906DU-T1-GE3 is widely used in various applications, including: - DC-DC converters - Motor control - Battery management systems - Power supplies

Detailed and Complete Alternative Models

Some alternative models to the SI5906DU-T1-GE3 include: - SI5943DCT1GE3 - SI7858DP-T1-GE3 - SI7149DP-T1-GE3 - SI7469DP-T1-GE3

In conclusion, the SI5906DU-T1-GE3 power MOSFET offers efficient power management capabilities, making it suitable for a wide range of applications in the electronics industry.

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技術ソリューションにおける SI5906DU-T1-GE3 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum operating temperature of SI5906DU-T1-GE3?

    • The maximum operating temperature of SI5906DU-T1-GE3 is typically 150°C.
  2. What is the typical input voltage range for SI5906DU-T1-GE3?

    • The typical input voltage range for SI5906DU-T1-GE3 is 4.5V to 60V.
  3. What is the typical output current capability of SI5906DU-T1-GE3?

    • SI5906DU-T1-GE3 has a typical output current capability of 3A.
  4. Does SI5906DU-T1-GE3 have overcurrent protection?

    • Yes, SI5906DU-T1-GE3 features overcurrent protection to safeguard against excessive currents.
  5. What is the typical efficiency of SI5906DU-T1-GE3?

    • The typical efficiency of SI5906DU-T1-GE3 is around 95%.
  6. Is SI5906DU-T1-GE3 suitable for automotive applications?

    • Yes, SI5906DU-T1-GE3 is designed to meet the requirements for automotive applications.
  7. Does SI5906DU-T1-GE3 require an external heat sink for thermal management?

    • In most cases, SI5906DU-T1-GE3 does not require an external heat sink due to its efficient thermal design.
  8. Can SI5906DU-T1-GE3 be used in industrial automation systems?

    • Yes, SI5906DU-T1-GE3 is well-suited for integration into industrial automation systems.
  9. What are the typical application scenarios for SI5906DU-T1-GE3?

    • Typical application scenarios for SI5906DU-T1-GE3 include power supplies, LED lighting, and motor control.
  10. Does SI5906DU-T1-GE3 have built-in short-circuit protection?

    • Yes, SI5906DU-T1-GE3 incorporates built-in short-circuit protection to enhance system reliability.