画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
SI4916DY-T1-GE3

SI4916DY-T1-GE3

Product Overview

Category

SI4916DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications such as voltage regulation and power switching.

Characteristics

  • High efficiency
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

SI4916DY-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

The essence of SI4916DY-T1-GE3 lies in its ability to provide reliable and efficient power management solutions.

Packaging/Quantity

It is usually packaged in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 42A
  • RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 15nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The pin configuration of SI4916DY-T1-GE3 is as follows: 1. Gate 2. Source 3. Drain 4. N/C 5. N/C 6. Source 7. Drain 8. N/C

Functional Features

SI4916DY-T1-GE3 offers the following functional features: - Low on-resistance for minimal power dissipation - Fast switching speed for improved efficiency - Robust construction for reliable performance

Advantages and Disadvantages

Advantages

  • High efficiency
  • Low power dissipation
  • Reliable performance
  • Compact package size

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

SI4916DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to regulate the flow of current through the device.

Detailed Application Field Plans

SI4916DY-T1-GE3 is well-suited for various power management applications, including: - Switching power supplies - DC-DC converters - Motor control systems - Battery management

Detailed and Complete Alternative Models

Some alternative models to SI4916DY-T1-GE3 include: - SI4916DY-T1-E3 - SI4916DY-T1-RE3 - SI4916DY-T1-WE3

In conclusion, SI4916DY-T1-GE3 is a versatile power MOSFET that offers high efficiency, fast switching speed, and reliable performance, making it an ideal choice for various power management applications.

[Word count: 398]

技術ソリューションにおける SI4916DY-T1-GE3 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum operating temperature of SI4916DY-T1-GE3?

    • The maximum operating temperature of SI4916DY-T1-GE3 is typically 150°C.
  2. What is the input voltage range for SI4916DY-T1-GE3?

    • The input voltage range for SI4916DY-T1-GE3 is typically 4.5V to 60V.
  3. What is the typical output current capability of SI4916DY-T1-GE3?

    • The typical output current capability of SI4916DY-T1-GE3 is 3A.
  4. Does SI4916DY-T1-GE3 have overcurrent protection?

    • Yes, SI4916DY-T1-GE3 features overcurrent protection to safeguard the circuit.
  5. What is the typical efficiency of SI4916DY-T1-GE3?

    • The typical efficiency of SI4916DY-T1-GE3 is around 90%.
  6. Is SI4916DY-T1-GE3 suitable for automotive applications?

    • Yes, SI4916DY-T1-GE3 is designed to meet the requirements for automotive applications.
  7. Does SI4916DY-T1-GE3 require external compensation components?

    • No, SI4916DY-T1-GE3 is internally compensated and does not require external compensation components.
  8. What is the typical quiescent current of SI4916DY-T1-GE3?

    • The typical quiescent current of SI4916DY-T1-GE3 is 40µA.
  9. Can SI4916DY-T1-GE3 be used in industrial control systems?

    • Yes, SI4916DY-T1-GE3 is suitable for use in industrial control systems.
  10. Does SI4916DY-T1-GE3 have built-in thermal shutdown protection?

    • Yes, SI4916DY-T1-GE3 includes built-in thermal shutdown protection to prevent overheating.