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SI4888DY-T1-E3

SI4888DY-T1-E3

Product Overview

Category

SI4888DY-T1-E3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High power handling capability
  • Low on-resistance
  • Fast switching speed
  • Low gate drive requirements

Package

The SI4888DY-T1-E3 is typically available in a surface-mount DPAK (TO-252) package.

Essence

The essence of SI4888DY-T1-E3 lies in its ability to efficiently control and manage power flow in various electronic circuits.

Packaging/Quantity

It is usually supplied in reels with a standard quantity of 2500 pieces per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 48A
  • RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
  • Gate-Source Voltage (VGS) (Max): ±20V
  • Total Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The pin configuration of SI4888DY-T1-E3 is as follows: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal power loss
  • High current-handling capability
  • Suitable for high-frequency switching applications
  • Enhanced thermal performance

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Reduced heat dissipation
  • Compact form factor
  • Reliable performance under high loads

Disadvantages

  • Sensitive to static discharge
  • Requires careful handling during assembly

Working Principles

SI4888DY-T1-E3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate voltage, the device can effectively regulate the power flow in the circuit.

Detailed Application Field Plans

SI4888DY-T1-E3 finds extensive use in various applications, including: - Switching power supplies - Motor control circuits - DC-DC converters - Battery management systems - LED lighting systems

Detailed and Complete Alternative Models

Some alternative models to SI4888DY-T1-E3 include: - SI4888DY-T1-GE3 - SI4888DY-T1-RE3 - SI4888DY-T1-E3-ND

In conclusion, SI4888DY-T1-E3 is a versatile power MOSFET that offers efficient power management and high reliability, making it suitable for a wide range of electronic applications.

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技術ソリューションにおける SI4888DY-T1-E3 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum operating temperature of SI4888DY-T1-E3?

    • The maximum operating temperature of SI4888DY-T1-E3 is 150°C.
  2. What is the typical input voltage range for SI4888DY-T1-E3?

    • The typical input voltage range for SI4888DY-T1-E3 is 4.5V to 18V.
  3. What is the typical output current capability of SI4888DY-T1-E3?

    • The typical output current capability of SI4888DY-T1-E3 is 3A.
  4. Does SI4888DY-T1-E3 have overcurrent protection?

    • Yes, SI4888DY-T1-E3 features overcurrent protection.
  5. What is the typical switching frequency of SI4888DY-T1-E3?

    • The typical switching frequency of SI4888DY-T1-E3 is 500kHz.
  6. Is SI4888DY-T1-E3 suitable for automotive applications?

    • Yes, SI4888DY-T1-E3 is suitable for automotive applications.
  7. Does SI4888DY-T1-E3 require an external compensation network?

    • No, SI4888DY-T1-E3 does not require an external compensation network.
  8. What is the typical efficiency of SI4888DY-T1-E3?

    • The typical efficiency of SI4888DY-T1-E3 is 95%.
  9. Can SI4888DY-T1-E3 operate in a wide input voltage range?

    • Yes, SI4888DY-T1-E3 can operate in a wide input voltage range from 4.5V to 18V.
  10. Does SI4888DY-T1-E3 have thermal shutdown protection?

    • Yes, SI4888DY-T1-E3 is equipped with thermal shutdown protection.