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SI4808DY-T1-GE3

SI4808DY-T1-GE3

Product Overview

Category

The SI4808DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • Low on-resistance
  • High current handling capability
  • Fast switching speed
  • Low gate drive requirements

Package

The SI4808DY-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET offers high performance and reliability in power management applications.

Packaging/Quantity

It is usually supplied in reels with a standard quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 8.7A
  • On-Resistance (RDS(ON)): 10mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 15nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4808DY-T1-GE3 features the following pin configuration: 1. GATE 2. DRAIN 3. SOURCE 4. N/C 5. SOURCE 6. DRAIN 7. SOURCE 8. GATE

Functional Features

  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed allows for rapid control of power flow.
  • High current handling capability enables robust performance in demanding applications.

Advantages and Disadvantages

Advantages

  • High efficiency
  • Robust performance
  • Compact package size

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The SI4808DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to regulate power flow and manage voltage levels effectively.

Detailed Application Field Plans

This MOSFET is well-suited for a wide range of applications, including: - Switching power supplies - Battery management systems - Motor control - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the SI4808DY-T1-GE3 include: - SI4812DY-T1-GE3 - SI4835DDY-T1-GE3 - SI4856DY-T1-GE3

In conclusion, the SI4808DY-T1-GE3 power MOSFET offers high-performance characteristics and versatile applications, making it an essential component in various power management systems.

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技術ソリューションにおける SI4808DY-T1-GE3 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum voltage rating for SI4808DY-T1-GE3?

    • The maximum voltage rating for SI4808DY-T1-GE3 is 30V.
  2. What is the typical on-resistance of SI4808DY-T1-GE3?

    • The typical on-resistance of SI4808DY-T1-GE3 is 8.5mΩ.
  3. What is the maximum continuous drain current for SI4808DY-T1-GE3?

    • The maximum continuous drain current for SI4808DY-T1-GE3 is 40A.
  4. What are the typical applications for SI4808DY-T1-GE3?

    • SI4808DY-T1-GE3 is commonly used in power management solutions, motor control, and battery protection circuits.
  5. Does SI4808DY-T1-GE3 have built-in overcurrent protection?

    • Yes, SI4808DY-T1-GE3 features built-in overcurrent protection.
  6. What is the operating temperature range for SI4808DY-T1-GE3?

    • The operating temperature range for SI4808DY-T1-GE3 is -55°C to 150°C.
  7. Is SI4808DY-T1-GE3 suitable for automotive applications?

    • Yes, SI4808DY-T1-GE3 is suitable for automotive applications due to its high reliability and performance.
  8. Does SI4808DY-T1-GE3 require an external gate driver?

    • No, SI4808DY-T1-GE3 does not require an external gate driver as it has a built-in driver.
  9. What package type is SI4808DY-T1-GE3 available in?

    • SI4808DY-T1-GE3 is available in a PowerPAK® SO-8 package.
  10. Can SI4808DY-T1-GE3 be used in synchronous rectification applications?

    • Yes, SI4808DY-T1-GE3 can be used in synchronous rectification applications due to its low on-resistance and fast switching characteristics.