SI3434DV-T1-E3

Product Overview

• Category: Power MOSFET
• Use: Power management in electronic devices
• Characteristics: High efficiency, low power consumption, compact size
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power handling for electronic devices
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage - Drain-Source Breakdown (Vds): 30V
• Current - Continuous Drain (Id) @ 25°C: 195A
• Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V
• Input Capacitance (Ciss) @ Vds: 6800pF @ 15V
• Power Dissipation (Max): 2.5W

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Source
• Pin 3: Drain
• Pin 4: Source

Functional Features

• Fast switching speed
• Low gate charge
• Enhanced thermal performance

Advantages and Disadvantages

• Advantages:
  • High efficiency
  • Compact size
  • Low power consumption
• Disadvantages:
  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The SI3434DV-T1-E3 operates by controlling the flow of power through the drain and source terminals using the gate voltage. When a suitable voltage is applied to the gate, it allows current to flow between the drain and source, enabling efficient power management.

Detailed Application Field Plans

This MOSFET is widely used in various applications such as: - Switching power supplies - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

• Alternative Model 1: SI3444DV-T1-E3
• Alternative Model 2: SI3422DV-T1-E3
• Alternative Model 3: SI3411DV-T1-E3

Note: The alternative models listed above provide similar functionality and can be considered as substitutes for the SI3434DV-T1-E3.

This comprehensive entry provides an in-depth understanding of the SI3434DV-T1-E3 Power MOSFET, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.