SI2335DS-T1-E3

Product Overview

• Category: Transistor
• Use: Power management
• Characteristics: Low on-resistance, small package size, high power handling capability
• Package: SOT-23
• Essence: N-channel MOSFET
• Packaging/Quantity: Tape and reel, 3000 pieces per reel

Specifications

• Voltage Rating: 20V
• Current Rating: 3.6A
• On-Resistance: 60mΩ
• Package Type: SOT-23

Detailed Pin Configuration

• Pin 1: Source
• Pin 2: Gate
• Pin 3: Drain

Functional Features

• High power handling capability
• Low on-resistance for efficient power management
• Small package size for space-constrained applications

Advantages and Disadvantages

• Advantages:
  • Efficient power management
  • Small package size
  • High power handling capability
• Disadvantages:
  • Limited voltage and current ratings compared to some alternatives

Working Principles

The SI2335DS-T1-E3 is a N-channel MOSFET designed for power management applications. When a voltage is applied to the gate pin, it creates an electric field which controls the flow of current between the source and drain pins.

Detailed Application Field Plans

This transistor is commonly used in battery management systems, power supplies, load switches, and other applications where efficient power management is crucial. Its small package size makes it suitable for portable electronic devices and space-constrained designs.

Detailed and Complete Alternative Models

• Alternative Model 1: SI2336DS-T1-E3
  • Similar specifications and package type
• Alternative Model 2: SI2337DS-T1-E3
  • Higher voltage and current ratings, same package type

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