VS-GB75TP120N

Product Category: Power Transistor

Basic Information Overview: - Category: Semiconductor - Use: Power amplification and switching - Characteristics: High voltage, high current capability - Package: TO-220AB - Essence: NPN Bipolar Junction Transistor (BJT) - Packaging/Quantity: Typically sold in reels of 1000 units

Specifications: - Voltage Rating: 120V - Current Rating: 75A - Power Dissipation: 300W - Gain (hFE): 15-60 - Frequency: Up to 3MHz

Detailed Pin Configuration: - Base (B): Input terminal for controlling the transistor's operation - Collector (C): Terminal connected to the positive supply voltage - Emitter (E): Terminal connected to the ground or negative supply voltage

Functional Features: - High voltage and current handling capabilities - Fast switching speed - Low saturation voltage - Good thermal stability

Advantages: - Suitable for high-power applications - Robust construction - Wide frequency range

Disadvantages: - Higher power dissipation compared to some alternative models - Larger package size may limit use in space-constrained designs

Working Principles: The VS-GB75TP120N operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small input signal at the base terminal, allowing for amplification or switching of larger currents between the collector and emitter terminals.

Detailed Application Field Plans: - Industrial motor control - Power supplies - Audio amplifiers - Switching regulators

Detailed and Complete Alternative Models: - MJE3055T - TIP31C - 2N3055

This comprehensive entry provides an in-depth understanding of the VS-GB75TP120N power transistor, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.