Vishay Semiconductor Diodes Division
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SM5S10AHE3/2D
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SM5S10AHE3/2D

Product Overview

  • Belongs to: Semiconductor devices
  • Category: Schottky diode
  • Use: Rectification and voltage clamping
  • Characteristics: High current capability, low forward voltage drop
  • Package: DO-218AB
  • Essence: Efficient power management
  • Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

  • Forward Voltage Drop: 0.55V
  • Reverse Voltage: 100V
  • Forward Current: 5A
  • Reverse Recovery Time: 15ns
  • Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration

  • Pin 1: Anode
  • Pin 2: Cathode

Functional Features

  • Fast switching speed
  • Low leakage current
  • High surge capability

Advantages

  • Low forward voltage drop reduces power loss
  • Fast switching speed improves efficiency
  • High surge capability ensures reliability in harsh conditions

Disadvantages

  • Higher cost compared to standard diodes
  • Limited reverse voltage compared to other diode types

Working Principles

The SM5S10AHE3/2D operates based on the Schottky barrier principle, where a metal-semiconductor junction is formed, resulting in lower forward voltage drop and faster switching speed compared to conventional PN-junction diodes.

Detailed Application Field Plans

  • Power supplies
  • Solar panel bypass diodes
  • Automotive electronics
  • Voltage clamping circuits

Detailed and Complete Alternative Models

  • 1N5819: Lower current capability, similar forward voltage drop
  • SS510: Higher reverse voltage, lower forward current

This comprehensive entry provides detailed information about the SM5S10AHE3/2D, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

技術ソリューションにおける SM5S10AHE3/2D の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the SM5S10AHE3/2D?

    • The SM5S10AHE3/2D is a TVS (transient voltage suppressor) diode designed to protect sensitive electronic components from voltage spikes and transients.

  2. What is the maximum peak pulse power of the SM5S10AHE3/2D?

    • The maximum peak pulse power of the SM5S10AHE3/2D is 5000W.

  3. What is the breakdown voltage of the SM5S10AHE3/2D?

    • The breakdown voltage of the SM5S10AHE3/2D is 10V.

  4. What are the typical applications for the SM5S10AHE3/2D?

    • The SM5S10AHE3/2D is commonly used in surge protection for telecommunications equipment, industrial control systems, and automotive electronics.

  5. What is the operating temperature range of the SM5S10AHE3/2D?

    • The operating temperature range of the SM5S10AHE3/2D is -55°C to 150°C.

  6. What is the clamping voltage of the SM5S10AHE3/2D?

    • The clamping voltage of the SM5S10AHE3/2D is 17.9V at 16A.

  7. Is the SM5S10AHE3/2D RoHS compliant?

    • Yes, the SM5S10AHE3/2D is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive.

  8. What package type does the SM5S10AHE3/2D come in?

    • The SM5S10AHE3/2D is available in a DO-218AB package.

  9. What are the key features of the SM5S10AHE3/2D?

    • The key features of the SM5S10AHE3/2D include low clamping voltage, fast response time, and high surge capability.

  10. Where can I find detailed specifications and application notes for the SM5S10AHE3/2D?

    • Detailed specifications and application notes for the SM5S10AHE3/2D can be found on the manufacturer's website or in the product datasheet.