The 2SC5200N(S1,E,S) is a power transistor that belongs to the category of electronic components used in various applications. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
The 2SC5200N(S1,E,S) typically has the following pin configuration: 1. Base (B) 2. Collector (C) 3. Emitter (E)
The 2SC5200N(S1,E,S) operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current. It amplifies or switches electrical signals based on the input at the base terminal.
The 2SC5200N(S1,E,S) finds extensive use in the following applications: - Audio amplifiers - Power supply circuits - High-power switching circuits - RF amplifiers
Some alternative models to the 2SC5200N(S1,E,S) include: - MJL21193 - MJL21194 - 2SA1943 - 2SC5200
In conclusion, the 2SC5200N(S1,E,S) is a versatile power transistor with high power handling capacity, making it suitable for various amplification and switching applications across different industries.
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What is the maximum collector current of 2SC5200N(S1,E,S)?
What is the maximum collector-emitter voltage of 2SC5200N(S1,E,S)?
What is the power dissipation of 2SC5200N(S1,E,S)?
What are the typical applications of 2SC5200N(S1,E,S)?
What is the gain (hfe) of 2SC5200N(S1,E,S)?
What is the maximum junction temperature of 2SC5200N(S1,E,S)?
Is 2SC5200N(S1,E,S) suitable for high-power applications?
What are the recommended operating conditions for 2SC5200N(S1,E,S)?
Can 2SC5200N(S1,E,S) be used in parallel configurations for higher power output?
Are there any specific considerations for heat dissipation when using 2SC5200N(S1,E,S) in a technical solution?