2SA1312-BL(TE85L,F) Encyclopedia Entry

Product Category: Transistor

Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current gain, low noise, and low distortion - Package: SOT-89 package - Essence: PNP silicon epitaxial planar transistor - Packaging/Quantity: Available in reels of 3000 units

Specifications: - Collector-Base Voltage (VCBO): -50V - Collector-Emitter Voltage (VCEO): -50V - Emitter-Base Voltage (VEBO): -5V - Collector Current (IC): -1A - Power Dissipation (PD): 1W - Transition Frequency (fT): 150MHz - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1 (Emitter): Connected to the emitter region of the transistor - Pin 2 (Base): Connected to the base region of the transistor - Pin 3 (Collector): Connected to the collector region of the transistor

Functional Features: - High current gain for amplification applications - Low noise and distortion for high-fidelity audio amplification - Suitable for low-power switching applications

Advantages: - Small form factor SOT-89 package - High transition frequency for RF applications - Low saturation voltage for efficient switching

Disadvantages: - Limited power dissipation capability - Relatively low collector current rating

Working Principles: The 2SA1312-BL(TE85L,F) operates based on the principles of bipolar junction transistors, utilizing the interaction between minority and majority charge carriers to control the flow of current through the device.

Detailed Application Field Plans: - Audio amplification in portable devices - Low-power switching in consumer electronics - RF amplifier stages in communication systems

Detailed and Complete Alternative Models: - 2SA1015 - 2SA1943 - 2SA970

This comprehensive entry provides a detailed overview of the 2SA1312-BL(TE85L,F) transistor, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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