TSM60N900CH C5G

Introduction

The TSM60N900CH C5G is a high-performance semiconductor device designed for use in power electronics applications. This entry provides an overview of the product, including its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor Device
• Use: Power Electronics Applications
• Characteristics: High Performance, Efficient Power Conversion
• Package: TO-247
• Essence: Advanced Power Management
• Packaging/Quantity: Individual Units

Specifications

• Voltage Rating: 900V
• Current Rating: 60A
• Technology: Silicon Carbide (SiC)
• Operating Temperature: -40°C to 175°C
• Gate Voltage (Max): ±20V
• Reverse Recovery Time: 35ns
• Mounting Type: Through Hole

Detailed Pin Configuration

The TSM60N900CH C5G features a standard TO-247 pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High Voltage Capability
• Fast Switching Speed
• Low On-Resistance
• Enhanced Thermal Performance
• Robustness and Reliability

Advantages and Disadvantages

Advantages

• Improved Efficiency
• Reduced Heat Dissipation
• Compact Design
• Extended Lifespan
• Suitable for High-Frequency Operation

Disadvantages

• Higher Cost Compared to Traditional Silicon Devices
• Sensitivity to Voltage Spikes

Working Principles

The TSM60N900CH C5G utilizes silicon carbide technology to enable efficient power conversion. When a suitable gate voltage is applied, the device allows current to flow between the drain and source terminals, facilitating power control and management in various electronic systems.

Detailed Application Field Plans

The TSM60N900CH C5G is ideally suited for the following applications: - Electric Vehicle (EV) Charging Systems - Renewable Energy Inverters - Industrial Motor Drives - Uninterruptible Power Supplies (UPS) - Solar Power Converters

Detailed and Complete Alternative Models

For users seeking alternative options, the following semiconductor devices can be considered: 1. Infineon Technologies IDH06SG60C SiC MOSFET 2. ON Semiconductor NTHL080N120SC1 SiC Power MOSFET 3. Wolfspeed C3M0065100K SiC Power Module

In conclusion, the TSM60N900CH C5G offers high-performance characteristics and advanced power management capabilities, making it a valuable component in power electronics applications.

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