Taiwan Semiconductor Corporation
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TSM2N7000KCT B0G
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TSM2N7000KCT B0G

Product Overview

Category

The TSM2N7000KCT B0G belongs to the category of small signal MOSFETs.

Use

It is commonly used for low-power switching applications in various electronic circuits.

Characteristics

  • Low threshold voltage
  • Low input capacitance
  • Fast switching speed

Package

The TSM2N7000KCT B0G is available in a SOT-23 package.

Essence

This MOSFET is essential for controlling the flow of current in low-power electronic devices.

Packaging/Quantity

The TSM2N7000KCT B0G is typically packaged in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 200mA
  • Total Power Dissipation (PD): 350mW
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The TSM2N7000KCT B0G has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance
  • Enhanced power dissipation capability
  • High input impedance

Advantages and Disadvantages

Advantages

  • Small form factor
  • Low power consumption
  • Fast switching speed

Disadvantages

  • Limited maximum current handling capacity
  • Sensitivity to static electricity

Working Principles

The TSM2N7000KCT B0G operates based on the principle of field-effect transistors, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal.

Detailed Application Field Plans

The TSM2N7000KCT B0G is widely used in the following applications: - Portable electronic devices - Battery management systems - LED lighting control circuits - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the TSM2N7000KCT B0G include: - 2N7002 - BS170 - IRF5305

In conclusion, the TSM2N7000KCT B0G is a small signal MOSFET with versatile applications in low-power electronic circuits. Its compact size, low power consumption, and fast switching speed make it an ideal choice for various portable and battery-powered devices.

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技術ソリューションにおける TSM2N7000KCT B0G の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum drain-source voltage for TSM2N7000KCT B0G?

    • The maximum drain-source voltage for TSM2N7000KCT B0G is 60V.

  2. What is the continuous drain current rating of TSM2N7000KCT B0G?

    • The continuous drain current rating of TSM2N7000KCT B0G is 200mA.

  3. What is the on-state resistance (RDS(on)) of TSM2N7000KCT B0G?

    • The on-state resistance (RDS(on)) of TSM2N7000KCT B0G is typically 5 ohms.

  4. Is TSM2N7000KCT B0G suitable for switching applications?

    • Yes, TSM2N7000KCT B0G is suitable for switching applications due to its low on-state resistance and fast switching characteristics.

  5. What is the maximum junction temperature for TSM2N7000KCT B0G?

    • The maximum junction temperature for TSM2N7000KCT B0G is 150°C.

  6. Can TSM2N7000KCT B0G be used in automotive applications?

    • Yes, TSM2N7000KCT B0G is suitable for use in automotive applications due to its high reliability and performance.

  7. Does TSM2N7000KCT B0G have ESD protection?

    • Yes, TSM2N7000KCT B0G is designed with built-in ESD protection, making it suitable for sensitive electronic applications.

  8. What is the package type of TSM2N7000KCT B0G?

    • TSM2N7000KCT B0G comes in a SOT-23 package, which is compact and suitable for space-constrained designs.

  9. Is TSM2N7000KCT B0G RoHS compliant?

    • Yes, TSM2N7000KCT B0G is RoHS compliant, meeting environmental regulations.

  10. What are some typical applications for TSM2N7000KCT B0G?

    • Typical applications for TSM2N7000KCT B0G include power management, load switching, battery management, and portable electronics.