NAND01GW3B2AN6F

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile memory storage
• Characteristics: High-density, low-power consumption
• Package: BGA (Ball Grid Array)
• Essence: NAND Flash Memory
• Packaging/Quantity: 1 piece per package

Specifications

• Capacity: 1 Gigabit (128 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The NAND01GW3B2AN6F has a total of 8 pins: 1. VCC: Power supply voltage 2. GND: Ground 3. CS: Chip select 4. SCLK: Serial clock input 5. SI: Serial data input 6. SO: Serial data output 7. WP: Write protect 8. HOLD: Hold input

Functional Features

• High-speed data transfer rate
• Error correction code (ECC) for data integrity
• Block erase and page program operations
• Automatic program and erase suspend/resume functions
• Software and hardware write protection options

Advantages

• High storage capacity in a compact form factor
• Low power consumption for extended battery life
• Fast data transfer rate for efficient operation
• Reliable data retention and endurance
• Flexible write protection options for data security

Disadvantages

• Limited number of program/erase cycles compared to other memory technologies
• Relatively higher cost per unit compared to traditional hard drives

Working Principles

The NAND01GW3B2AN6F utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The data is written and read using electrical charges to trap or release electrons within the memory cells. This process enables non-volatile data storage, meaning the data remains even when power is removed.

Detailed Application Field Plans

The NAND01GW3B2AN6F is commonly used in various electronic devices that require non-volatile memory storage, such as: - Solid-state drives (SSDs) - USB flash drives - Memory cards (SD, microSD, etc.) - Embedded systems - Consumer electronics (smartphones, tablets, etc.)

Detailed and Complete Alternative Models

1. NAND02GW3B2AN6F: 2 Gigabit (256 Megabytes) capacity
2. NAND04GW3B2AN6F: 4 Gigabit (512 Megabytes) capacity
3. NAND08GW3B2AN6F: 8 Gigabit (1 Gigabyte) capacity
4. NAND16GW3B2AN6F: 16 Gigabit (2 Gigabytes) capacity

These alternative models offer higher storage capacities while maintaining similar characteristics and functionality.

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