M48T201V-85MH1F

Product Overview

Category

The M48T201V-85MH1F belongs to the category of non-volatile static random access memory (NVSRAM).

Use

This product is commonly used in applications that require reliable and non-volatile storage of data, such as embedded systems, industrial automation, and telecommunications.

Characteristics

• Non-volatile: The M48T201V-85MH1F retains stored data even when power is removed.
• Static RAM: It provides fast read and write access times.
• High density: The device offers a large storage capacity.
• Low power consumption: The M48T201V-85MH1F operates efficiently, minimizing energy usage.
• Extended temperature range: It can withstand harsh environmental conditions.

Package

The M48T201V-85MH1F is available in a compact surface-mount package, ensuring easy integration into various electronic systems.

Essence

The essence of the M48T201V-85MH1F lies in its ability to combine the benefits of non-volatile memory with the speed and reliability of static RAM.

Packaging/Quantity

This product is typically packaged in reels or trays, with quantities varying depending on customer requirements.

Specifications

• Memory Size: 2 Megabits (256 Kbytes)
• Organization: 32K x 8 bits
• Supply Voltage: 4.5V to 5.5V
• Access Time: 85ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 10 years
• Package Type: 44-lead TSOP

Detailed Pin Configuration

The M48T201V-85MH1F features a 44-lead Thin Small Outline Package (TSOP) with the following pin configuration:

1. VCC
2. A16
3. A14
4. A12
5. A7
6. A6
7. A5
8. A4
9. A3
10. A2
11. A1
12. A0
13. CE
14. OE
15. WE
16. NC
17. DQ0
18. DQ1
19. DQ2
20. DQ3
21. DQ4
22. DQ5
23. DQ6
24. DQ7
25. VSS
26. A15
27. A13
28. A11
29. A10
30. A9
31. A8
32. A17
33. A18
34. A19
35. A20
36. A21
37. A22
38. A23
39. A24
40. A25
41. A26
42. A27
43. A28
44. A29

Functional Features

• Non-volatile data storage: The M48T201V-85MH1F ensures that stored data is retained even during power loss or system shutdown.
• Fast access times: With an access time of 85ns, this NVSRAM provides quick read and write operations.
• High reliability: The device offers robust performance and long-term data retention, making it suitable for critical applications.
• Low power consumption: The M48T201V-85MH1F operates efficiently, minimizing energy usage and extending battery life in portable devices.

Advantages and Disadvantages

Advantages

• Non-volatile memory eliminates the need for external backup systems.
• Fast access times enhance system performance.
• High reliability ensures data integrity.
• Low power consumption reduces energy costs.

Disadvantages

• Relatively higher cost compared to traditional volatile RAM.
• Limited storage capacity compared to other non-volatile memory technologies.

Working Principles

The M48T201V-85MH1F combines a static RAM array with a non-volatile electrically erasable programmable read-only memory (EEPROM) element. The SRAM portion provides fast read and write access, while the EEPROM section ensures data retention during power loss. This integration allows for reliable and non-volatile storage of critical information.

Detailed Application Field Plans

The M48T201V-85MH1F finds applications in various fields, including:

1. Embedded Systems: Used as non-volatile storage for firmware, configuration data, and critical system parameters.
2. Industrial Automation: Provides reliable data storage for process control systems, machine monitoring, and equipment diagnostics.
3. Telecommunications: Utilized in network infrastructure equipment for storing configuration settings, call records, and system logs.

Detailed and Complete Alternative Models

1. M48T201V-85PC1: Similar to M48T201V-85MH1F but available in a