M48T08Y-10MH1E

Product Overview

Category

The M48T08Y-10MH1E belongs to the category of non-volatile static random access memory (NVSRAM) products.

Use

This product is commonly used in applications that require reliable data storage and retrieval, even in the absence of power. It combines the benefits of both RAM and non-volatile memory, making it suitable for various electronic devices.

Characteristics

• Non-volatile: The M48T08Y-10MH1E retains stored data even when power is disconnected.
• High density: This NVSRAM offers a large storage capacity, allowing for extensive data storage.
• Fast access time: With a low access time, the M48T08Y-10MH1E enables quick data retrieval.
• Low power consumption: This product is designed to minimize power usage, enhancing energy efficiency.

Package

The M48T08Y-10MH1E is available in a compact and durable package, ensuring its protection during transportation and handling.

Essence

The essence of the M48T08Y-10MH1E lies in its ability to provide reliable and non-volatile data storage, making it an essential component in various electronic systems.

Packaging/Quantity

This product is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities suitable for both small-scale and large-scale production.

Specifications

• Model: M48T08Y-10MH1E
• Supply voltage: 2.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Data retention: Minimum 10 years
• Memory organization: 8K x 8 bits
• Access time: 100ns

Detailed Pin Configuration

The M48T08Y-10MH1E features the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A12: Address inputs
4. CE: Chip enable
5. OE: Output enable
6. WE: Write enable
7. DQ0-DQ7: Data input/output lines
8. DS: Data store
9. RST: Reset

Functional Features

• Non-volatile data storage: The M48T08Y-10MH1E retains stored data even when power is disconnected, ensuring data integrity.
• Random access: This NVSRAM allows for quick and direct access to specific memory locations.
• High-speed operation: With a fast access time, the M48T08Y-10MH1E enables efficient data retrieval and storage.
• Low power consumption: This product is designed to minimize power usage, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Reliable data storage: The non-volatile nature of the M48T08Y-10MH1E ensures that data remains intact, even during power interruptions.
• Fast access time: With a low access time, this NVSRAM enables efficient data retrieval.
• High density: The M48T08Y-10MH1E offers a large storage capacity, accommodating extensive data requirements.
• Low power consumption: This product minimizes power usage, enhancing energy efficiency in electronic systems.

Disadvantages

• Limited data retention: While the M48T08Y-10MH1E provides reliable data storage, its data retention period is limited to a minimum of 10 years.
• Higher cost: Compared to traditional RAM, NVSRAM products like the M48T08Y-10MH1E may have a higher price point.

Working Principles

The M48T08Y-10MH1E combines the functionality of a static random access memory (SRAM) and a non-volatile memory. It utilizes a small battery to provide power during periods of power loss, ensuring data retention. The SRAM component allows for fast read and write operations, while the non-volatile memory ensures that data remains intact even when power is disconnected.

Detailed Application Field Plans

The M48T08Y-10MH1E finds applications in various electronic systems, including but not limited to: - Industrial automation - Automotive electronics - Medical devices - Communication equipment - Consumer electronics

In these fields, the M48T08Y-10MH1E can be used for data storage, configuration settings, and critical information backup.

Detailed and Complete Alternative Models

• M48T08Y-10MH6E
• M48T08Y-10MH1TR
• M48T08Y-10MH6TR
• M48T08Y-10MH1F
• M48T08Y-10MH6F

These alternative models offer