KT5G-2N2112

Product Overview

The KT5G-2N2112 belongs to the category of RF transistors and is primarily used in high-frequency applications. Known for its high power gain and low noise figure, this transistor is commonly used in wireless communication systems and radar applications. The KT5G-2N2112 comes in a compact package and is available in various quantities to suit different production needs.

Basic Information

• Category: RF Transistor
• Use: High-frequency applications in wireless communication and radar systems
• Characteristics: High power gain, low noise figure
• Package: Compact form factor
• Essence: Amplification of radio frequency signals
• Packaging/Quantity: Available in various packaging options to accommodate different production requirements

Specifications

• Frequency Range: X GHz - Y GHz
• Power Gain: Z dB
• Noise Figure: A dB
• Voltage: B V
• Current: C A
• Operating Temperature: D°C to E°C

Detailed Pin Configuration

The KT5G-2N2112 features a 4-pin configuration: 1. Pin 1: RF Input 2. Pin 2: Ground 3. Pin 3: Bias Voltage 4. Pin 4: RF Output

Functional Features

• High power gain for signal amplification
• Low noise figure for improved signal quality
• Compact form factor for space-constrained applications
• Wide operating temperature range for versatility

Advantages and Disadvantages

Advantages

• High power gain
• Low noise figure
• Compact size
• Versatile operating temperature range

Disadvantages

• Limited frequency range
• Sensitivity to voltage fluctuations

Working Principles

The KT5G-2N2112 operates on the principle of amplifying radio frequency signals with high power gain and minimal introduction of additional noise. This is achieved through the efficient utilization of internal circuitry and semiconductor materials.

Detailed Application Field Plans

The KT5G-2N2112 is well-suited for the following application fields: - Wireless communication systems - Radar applications - Microwave point-to-point links - Satellite communication systems

Detailed and Complete Alternative Models

For applications requiring similar functionality, alternative models to consider include: - KT6G-3N1112 - KT4G-4N3112 - KT7G-5N4112

In conclusion, the KT5G-2N2112 RF transistor offers high performance in high-frequency applications, making it an ideal choice for wireless communication and radar systems. Its compact design, high power gain, and low noise figure make it a valuable component in modern RF circuit designs.

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