GP1USC32XP

Product Overview

Category: Optoelectronics
Use: Infrared Emitting Diode
Characteristics: High power output, compact size, low power consumption
Package: Surface mount package
Essence: Infrared emitting diode for various applications
Packaging/Quantity: Available in reels of 2000 pieces

Specifications

Wavelength: 940nm
Forward Current: 100mA
Forward Voltage: 1.35V
Radiant Intensity: 20mW/sr

Detailed Pin Configuration

The GP1USC32XP has a standard 3-pin configuration with the following layout: 1. Anode 2. Cathode 3. No Connection

Functional Features

High radiant intensity
Wide operating temperature range
Low forward voltage
Fast response time

Advantages and Disadvantages

Advantages

Compact size
Low power consumption
High power output

Disadvantages

Limited viewing angle
Sensitive to static electricity

Working Principles

The GP1USC32XP operates by converting electrical energy into infrared radiation, making it suitable for various sensing and communication applications.

Detailed Application Field Plans

The GP1USC32XP is commonly used in the following applications: - Proximity sensors - Object detection - Remote controls - Optical encoders

Detailed and Complete Alternative Models

GP1UX311QS
GP1U58X

This completes the English editing encyclopedia entry structure format for GP1USC32XP, providing comprehensive information about its product details, specifications, features, and applications.