GP1UM281XK0F

Product Overview

Category: Optoelectronics
Use: Infrared Emitting Diode (IRED)
Characteristics: High efficiency, low power consumption, compact size
Package: Surface mount package
Essence: Infrared light emission for various applications
Packaging/Quantity: Available in reels of 3000 units

Specifications

Wavelength: 940nm
Forward Current: 50mA
Forward Voltage: 1.35V
Radiant Intensity: 20mW/sr

Detailed Pin Configuration

The GP1UM281XK0F has a standard 3-pin configuration with the following pinout: 1. Anode 2. Cathode 3. No Connection

Functional Features

High radiant intensity
Fast response time
Wide operating temperature range

Advantages and Disadvantages

Advantages

Low power consumption
Compact size
High efficiency

Disadvantages

Limited peak wavelength

Working Principles

The GP1UM281XK0F operates by converting electrical energy into infrared light through the process of electroluminescence. When a forward voltage is applied across the anode and cathode pins, the IRED emits infrared radiation.

Detailed Application Field Plans

The GP1UM281XK0F is suitable for various applications including: - Proximity sensors - Optical encoders - Remote controls - Industrial automation

Detailed and Complete Alternative Models

GP1UX311QS
GP1UX511QS
GP1UX511QS

In conclusion, the GP1UM281XK0F is a versatile infrared emitting diode with high efficiency and low power consumption, making it suitable for a wide range of optoelectronic applications.

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