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GP1UE281XK0F

GP1UE281XK0F

Product Overview

  • Category: Optoelectronic Component
  • Use: Infrared Emitting Diode
  • Characteristics: High efficiency, low power consumption
  • Package: Surface Mount Device (SMD)
  • Essence: Reliable infrared emission for various applications
  • Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications

  • Wavelength: 940nm
  • Forward Current: 50mA
  • Forward Voltage: 1.2V
  • Radiant Intensity: 20mW/sr

Detailed Pin Configuration

The GP1UE281XK0F has a standard SMD pin configuration with anode and cathode pins for easy integration into circuit boards.

Functional Features

  • High radiant intensity
  • Wide operating temperature range
  • Low forward voltage
  • Fast response time

Advantages

  • Energy-efficient
  • Compact design
  • Reliable performance

Disadvantages

  • Limited viewing angle
  • Sensitive to static electricity

Working Principles

The GP1UE281XK0F operates by converting electrical energy into infrared radiation through the process of electroluminescence. When a forward voltage is applied, electrons and holes recombine in the semiconductor material, emitting infrared light.

Detailed Application Field Plans

The GP1UE281XK0F is widely used in: - Infrared remote controls - Proximity sensors - Optical encoders - Industrial automation

Detailed and Complete Alternative Models

  • GP1UX311QS0F
  • GP1U781X

In conclusion, the GP1UE281XK0F is a high-performance infrared emitting diode suitable for various optoelectronic applications, offering reliable performance and energy efficiency.

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技術ソリューションにおける GP1UE281XK0F の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is GP1UE281XK0F?

    • GP1UE281XK0F is a high-speed, high-sensitivity photodetector with a built-in amplifier, commonly used in optical communication and sensing applications.
  2. What is the operating wavelength range of GP1UE281XK0F?

    • The operating wavelength range of GP1UE281XK0F is typically around 800nm to 1700nm, making it suitable for various near-infrared applications.
  3. What are the typical technical specifications of GP1UE281XK0F?

    • The typical technical specifications include a high responsivity, low dark current, wide bandwidth, and a compact package design for easy integration into systems.
  4. How can GP1UE281XK0F be used in optical communication systems?

    • GP1UE281XK0F can be used as a receiver in optical communication systems to convert optical signals into electrical signals for further processing.
  5. In what types of sensing applications can GP1UE281XK0F be utilized?

    • GP1UE281XK0F can be utilized in various sensing applications such as proximity sensing, object detection, and position sensing due to its high sensitivity and fast response time.
  6. What are the key advantages of using GP1UE281XK0F in technical solutions?

    • The key advantages include its high speed, high sensitivity, low noise, and compact size, making it ideal for demanding technical applications.
  7. What are the recommended operating conditions for GP1UE281XK0F?

    • The recommended operating conditions typically include a specific voltage supply range, temperature range, and optical power levels for optimal performance.
  8. Can GP1UE281XK0F be integrated into automated systems or robotics?

    • Yes, GP1UE281XK0F can be integrated into automated systems or robotics for tasks such as object detection, motion sensing, and position tracking.
  9. Are there any application notes or reference designs available for GP1UE281XK0F?

    • Yes, manufacturers often provide application notes and reference designs to assist engineers in implementing GP1UE281XK0F in their technical solutions.
  10. What are the typical considerations for designing circuits using GP1UE281XK0F?

    • Typical considerations include signal conditioning, noise reduction, impedance matching, and proper grounding to ensure reliable and accurate performance of the photodetector.