GP1UE281RK0F

Product Overview

Category: Optoelectronics
Use: Infrared Emitting Diode
Characteristics: High power output, compact size, low power consumption
Package: Surface mount package
Essence: Infrared light emission for various applications
Packaging/Quantity: Available in reels of 2000 units

Specifications

Wavelength: 940nm
Forward Current: 100mA
Forward Voltage: 1.35V
Radiant Intensity: 20mW/sr

Detailed Pin Configuration

The GP1UE281RK0F has a standard 3-pin configuration: 1. Anode (+) 2. Cathode (-) 3. No Connection (NC)

Functional Features

High radiant intensity
Wide operating temperature range
Low forward voltage

Advantages and Disadvantages

Advantages

Compact size
Low power consumption
High power output

Disadvantages

Limited wavelength range
Sensitive to static electricity

Working Principles

The GP1UE281RK0F operates by converting electrical energy into infrared radiation through the process of electroluminescence. When a forward voltage is applied across the anode and cathode, the diode emits infrared light.

Detailed Application Field Plans

The GP1UE281RK0F is widely used in various applications such as: - Infrared remote controls - Proximity sensors - Optical encoders - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to GP1UE281RK0F include: - GP1UX311QS - GP1U781R - GP1UX511QS

In conclusion, the GP1UE281RK0F is a high-performance infrared emitting diode with a compact design and low power consumption, making it suitable for a wide range of optoelectronic applications.

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