GP1UE271XK0F

Product Overview

Category: Optoelectronics
Use: Infrared Emitting Diode
Characteristics: High power output, compact size, low power consumption
Package: Surface mount package
Essence: Infrared light emission for various applications
Packaging/Quantity: Available in reels of 3000 units

Specifications

Wavelength: 940nm
Forward Current: 100mA
Forward Voltage: 1.35V
Radiant Intensity: 20mW/sr

Detailed Pin Configuration

The GP1UE271XK0F has a standard SMD pin configuration with anode and cathode pins.

Functional Features

High radiant intensity
Wide operating temperature range
Low forward voltage

Advantages and Disadvantages

Advantages

Compact size
Low power consumption
High radiant intensity

Disadvantages

Limited viewing angle
Sensitive to static electricity

Working Principles

The GP1UE271XK0F operates by converting electrical energy into infrared light through the process of electroluminescence.

Detailed Application Field Plans

The GP1UE271XK0F is suitable for various applications including: - Proximity sensors - Object detection - Remote controls - Optical encoders

Detailed and Complete Alternative Models

GP1UX311QS0F
GP1UW701QS0F
GP1UX511QS0F

This completes the entry for GP1UE271XK0F, providing comprehensive information about its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

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