Category: Optoelectronic Component
Use: Infrared Emitting Diode
Characteristics: High power output, compact size, low power consumption
Package: Surface mount
Essence: High-performance infrared emitter
Packaging/Quantity: Tape and reel, 3000 pieces per reel
The GP1UE261QKVF has a standard SMD package with two pins: 1. Anode (A) 2. Cathode (K)
Advantages: - High power output - Compact size - Low power consumption
Disadvantages: - Limited peak emission wavelength options - Sensitive to static electricity
The GP1UE261QKVF operates by converting electrical current into infrared radiation at a peak wavelength of 940 nm. When a forward voltage is applied across the anode and cathode, the diode emits infrared light, making it suitable for various sensing and communication applications.
This completes the entry for GP1UE261QKVF, providing comprehensive information about its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
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What is GP1UE261QKVF?
What are the key features of GP1UE261QKVF?
In what applications can GP1UE261QKVF be used?
What is the maximum data rate supported by GP1UE261QKVF?
How does GP1UE261QKVF provide galvanic isolation?
Is GP1UE261QKVF compliant with industry standards?
What is the power supply voltage range for GP1UE261QKVF?
Can GP1UE261QKVF withstand harsh environmental conditions?
Does GP1UE261QKVF support bidirectional signal transmission?
Are evaluation boards or reference designs available for GP1UE261QKVF?