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BR24G16FV-3GTE2

BR24G16FV-3GTE2

Product Overview

Category

BR24G16FV-3GTE2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic devices.

Characteristics

  • Non-volatile: The BR24G16FV-3GTE2 retains stored data even when power is disconnected.
  • High capacity: It offers a storage capacity of 16 kilobits (2 kilobytes).
  • Low power consumption: The device operates on low power, making it suitable for battery-powered applications.
  • High-speed data transfer: It supports high-speed data transfer with a maximum clock frequency of 3 MHz.
  • Wide operating voltage range: The device can operate within a voltage range of 1.7V to 5.5V.

Package

The BR24G16FV-3GTE2 is available in a small form factor package, such as SOP-8 or TSSOP-8.

Essence

The essence of BR24G16FV-3GTE2 lies in its ability to provide reliable and non-volatile data storage in a compact package.

Packaging/Quantity

The product is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

  • Memory capacity: 16 kilobits (2 kilobytes)
  • Interface: I2C (2-wire serial interface)
  • Operating voltage: 1.7V to 5.5V
  • Clock frequency: Up to 3 MHz
  • Write endurance: 1 million cycles
  • Data retention: 100 years

Detailed Pin Configuration

The BR24G16FV-3GTE2 features an 8-pin package with the following pin configuration:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. SDA: Serial data input/output pin
  4. SCL: Serial clock input pin
  5. WP: Write protect pin (optional)
  6. VSS: Ground
  7. NC: No connection
  8. VCC: Power supply voltage

Functional Features

  • Random access: The device allows random access to stored data, enabling efficient data retrieval.
  • Byte-level read and write operations: It supports byte-level read and write operations, providing flexibility in data manipulation.
  • Hardware write protection: The optional write protect pin (WP) can be used to prevent accidental writes to the memory.
  • Software write protection: The device also offers software write protection through specific commands, enhancing data security.

Advantages and Disadvantages

Advantages

  • Non-volatile storage: Data is retained even when power is disconnected.
  • Compact form factor: The small package size makes it suitable for space-constrained applications.
  • Low power consumption: Ideal for battery-powered devices.
  • High-speed data transfer: Supports fast data transfer rates.

Disadvantages

  • Limited storage capacity: The 16 kilobits capacity may not be sufficient for certain applications requiring larger memory sizes.
  • Relatively higher cost per kilobit compared to higher capacity memory devices.

Working Principles

The BR24G16FV-3GTE2 utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges within a floating gate transistor structure. These trapped charges represent binary information that can be read or modified using appropriate electrical signals.

Detailed Application Field Plans

The BR24G16FV-3GTE2 finds applications in various electronic devices, including but not limited to: - Consumer electronics - Automotive systems - Industrial automation - Medical devices - Internet of Things (IoT) devices

Detailed and Complete Alternative Models

  • BR24G16FV-3GTE2 is part of the BR24G series from a specific manufacturer. Other models within this series may offer different storage capacities or additional features.
  • Alternative non-volatile memory devices from different manufacturers include:
    • AT24C02: A 2-kilobit EEPROM from Atmel Corporation.
    • M24C08: An 8-kilobit EEPROM from STMicroelectronics.

Note: This entry provides a general overview of the BR24G16FV-3GTE2. For detailed technical information, please refer to the product datasheet or consult the manufacturer's documentation.

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技術ソリューションにおける BR24G16FV-3GTE2 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of BR24G16FV-3GTE2 in technical solutions:

  1. Question: What is the capacity of the BR24G16FV-3GTE2?
    Answer: The BR24G16FV-3GTE2 has a capacity of 16 kilobits (2 kilobytes).

  2. Question: What is the operating voltage range for this device?
    Answer: The operating voltage range for the BR24G16FV-3GTE2 is 1.7V to 5.5V.

  3. Question: Can I use this EEPROM in automotive applications?
    Answer: Yes, the BR24G16FV-3GTE2 is suitable for automotive applications as it meets AEC-Q100 Grade 2 requirements.

  4. Question: Does this EEPROM support high-speed data transfer?
    Answer: Yes, the BR24G16FV-3GTE2 supports high-speed I2C bus communication with a maximum frequency of 1 MHz.

  5. Question: Is this device compatible with other I2C devices?
    Answer: Yes, the BR24G16FV-3GTE2 is fully compatible with the I2C bus protocol and can be used alongside other I2C devices.

  6. Question: Can I write data to this EEPROM multiple times?
    Answer: Yes, the BR24G16FV-3GTE2 supports up to 1 million write cycles, allowing you to update data multiple times.

  7. Question: How long does data retention last on this EEPROM?
    Answer: The BR24G16FV-3GTE2 has a data retention period of 40 years, ensuring long-term storage of critical information.

  8. Question: Does this EEPROM have any built-in security features?
    Answer: Yes, the BR24G16FV-3GTE2 offers a write protection function that can be used to prevent unauthorized data modification.

  9. Question: Can I use this EEPROM in industrial environments?
    Answer: Absolutely, the BR24G16FV-3GTE2 is designed to operate reliably in industrial temperature ranges (-40°C to +105°C).

  10. Question: What package options are available for this device?
    Answer: The BR24G16FV-3GTE2 is available in an 8-pin SOP (Small Outline Package) and a 6-pin TSSOP (Thin Shrink Small Outline Package).

Please note that these answers are based on general information about the BR24G16FV-3GTE2 and may vary depending on specific application requirements.