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BR24G08FVM-3GTTR

BR24G08FVM-3GTTR

Product Overview

Category: Integrated Circuit (IC)

Use: Non-volatile memory for data storage and retrieval

Characteristics: - Low power consumption - High reliability - Wide operating voltage range - Small package size - High-speed data transfer

Package: SOP-8 (Small Outline Package)

Essence: The BR24G08FVM-3GTTR is a non-volatile memory IC that provides reliable data storage and retrieval capabilities. It is commonly used in various electronic devices where persistent data storage is required.

Packaging/Quantity: The BR24G08FVM-3GTTR is typically packaged in reels, with each reel containing 2,000 units of the IC.

Specifications

  • Memory Capacity: 8 kilobits (1 kilobyte)
  • Interface: I2C (Inter-Integrated Circuit)
  • Operating Voltage Range: 1.7V to 5.5V
  • Data Retention: 10 years (at 55°C)
  • Write/Erase Endurance: 1 million cycles

Detailed Pin Configuration

The BR24G08FVM-3GTTR has a total of 8 pins arranged as follows:

┌───┬───┐ │ 1 │ 2 │ ├───┼───┤ │ 3 │ 4 │ ├───┼───┤ │ 5 │ 6 │ ├───┼───┤ │ 7 │ 8 │ └───┴───┘

Pin Description: 1. VCC: Power supply voltage 2. SDA: Serial data input/output 3. SCL: Serial clock input 4. WP: Write protect (active low) 5. GND: Ground 6. NC: No connection 7. NC: No connection 8. VSS: Ground

Functional Features

  • Non-volatile storage: The BR24G08FVM-3GTTR retains data even when power is disconnected.
  • High-speed data transfer: The I2C interface allows for fast and efficient data communication.
  • Low power consumption: The IC operates with minimal power requirements, making it suitable for battery-powered devices.
  • High reliability: The memory cells are designed to withstand frequent write and erase cycles without degradation.

Advantages and Disadvantages

Advantages: - Small package size enables integration into compact electronic devices. - Wide operating voltage range allows compatibility with various power supply systems. - High-speed data transfer facilitates quick access to stored information. - Low power consumption prolongs battery life in portable devices.

Disadvantages: - Limited memory capacity may not be sufficient for certain applications requiring larger storage. - Write protect pin (WP) needs to be managed correctly to prevent accidental data modification.

Working Principles

The BR24G08FVM-3GTTR utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges within floating gate transistors, which can be electrically programmed or erased. The I2C interface allows the microcontroller or host device to communicate with the IC, enabling data read and write operations.

Detailed Application Field Plans

The BR24G08FVM-3GTTR finds application in a wide range of electronic devices, including but not limited to: - Smartphones and tablets - Wearable devices - Automotive electronics - Industrial control systems - Consumer electronics

In these applications, the IC is used for storing critical data such as configuration settings, user preferences, calibration data, and event logs.

Detailed and Complete Alternative Models

  • BR24G08FJ-3GT: Similar specifications and features, but with a different package (SSOP-8).
  • BR24G08FVT-3GT: Higher memory capacity (16 kilobits) with the same package and characteristics.
  • BR24G08F-3GT6T: Lower operating voltage range (1.7V to 3.6V) for specific power supply requirements.

These alternative models offer flexibility in choosing the appropriate IC based on specific application needs.

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技術ソリューションにおける BR24G08FVM-3GTTR の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of BR24G08FVM-3GTTR in technical solutions:

  1. Question: What is the capacity of the BR24G08FVM-3GTTR?
    Answer: The BR24G08FVM-3GTTR has a capacity of 8 kilobits (1 kilobyte).

  2. Question: What is the operating voltage range for this device?
    Answer: The operating voltage range for the BR24G08FVM-3GTTR is 1.7V to 5.5V.

  3. Question: Can I use this EEPROM in automotive applications?
    Answer: Yes, the BR24G08FVM-3GTTR is suitable for automotive applications as it meets AEC-Q100 Grade 2 requirements.

  4. Question: What is the maximum frequency at which I can communicate with this EEPROM?
    Answer: The maximum communication frequency supported by the BR24G08FVM-3GTTR is 400 kHz.

  5. Question: Does this EEPROM support both read and write operations?
    Answer: Yes, the BR24G08FVM-3GTTR supports both read and write operations.

  6. Question: Is this EEPROM compatible with I2C interface?
    Answer: Yes, the BR24G08FVM-3GTTR is compatible with the I2C interface.

  7. Question: Can I cascade multiple BR24G08FVM-3GTTR devices together?
    Answer: Yes, you can cascade multiple BR24G08FVM-3GTTR devices using the A0, A1, and A2 pins for address selection.

  8. Question: What is the data retention period of this EEPROM?
    Answer: The data retention period of the BR24G08FVM-3GTTR is specified as 10 years.

  9. Question: Does this EEPROM have any built-in write protection features?
    Answer: Yes, the BR24G08FVM-3GTTR has a built-in write protection feature that can be enabled using the WP pin.

  10. Question: Can I operate this EEPROM in a wide temperature range?
    Answer: Yes, the BR24G08FVM-3GTTR is designed to operate in a wide temperature range from -40°C to +105°C.

Please note that these answers are based on general information about the BR24G08FVM-3GTTR and may vary depending on the specific application and requirements.