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R1LV0208BSA-5SI#S0

R1LV0208BSA-5SI#S0

Basic Information Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - Low power consumption - High-speed operation - Large storage capacity - Compact package size

Package: SOP (Small Outline Package)

Essence: The R1LV0208BSA-5SI#S0 is a memory IC that provides high-speed and low-power storage capabilities in a compact package.

Packaging/Quantity: The R1LV0208BSA-5SI#S0 is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K words x 8 bits
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Access Time: 55 ns
  • Standby Current: 10 µA (typical)
  • Package Dimensions: 300 mil SOP

Detailed Pin Configuration

The R1LV0208BSA-5SI#S0 has a total of 28 pins, which are assigned specific functions as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | Vcc | Power supply voltage | | 2 | A0 | Address input | | 3 | A1 | Address input | | 4 | A2 | Address input | | 5 | A3 | Address input | | 6 | A4 | Address input | | 7 | A5 | Address input | | 8 | A6 | Address input | | 9 | A7 | Address input | | 10 | CE1 | Chip enable input | | 11 | CE2 | Chip enable input | | 12 | WE | Write enable input | | 13 | OE | Output enable input | | 14-21 | DQ0-DQ7 | Data input/output | | 22 | Vss | Ground | | 23-28 | NC | No connection |

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low power consumption ensures efficient energy usage.
  • Large storage capacity of 256K words x 8 bits provides ample memory space.
  • Compact package size enables easy integration into various electronic devices.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low standby current minimizes power consumption during idle periods. - Ample storage capacity accommodates a wide range of applications. - Small package size facilitates space-saving designs.

Disadvantages: - Limited compatibility with certain legacy systems that require different memory types. - Relatively higher cost compared to alternative memory technologies.

Working Principles

The R1LV0208BSA-5SI#S0 operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells within the IC are organized in a matrix-like structure, with each cell capable of storing one bit of data. Accessing data involves providing the appropriate address inputs and enabling the chip. The data can then be read from or written to the memory using the corresponding control signals.

Detailed Application Field Plans

The R1LV0208BSA-5SI#S0 is widely used in various electronic devices and systems that require high-speed and low-power memory storage. Some common application fields include:

  1. Embedded Systems: The IC is utilized in embedded systems such as microcontrollers, where fast and reliable data storage is essential for efficient operation.

  2. Communication Equipment: The memory device finds applications in communication equipment like routers, switches, and network devices, where it helps store routing tables, configuration data, and temporary buffers.

  3. Consumer Electronics: The IC is employed in consumer electronics products like digital cameras, printers, and gaming consoles, where it provides storage for images, documents, and game data.

  4. Automotive Electronics: The memory device is used in automotive electronics systems, including infotainment systems, engine control units (ECUs), and advanced driver-assistance systems (ADAS), to store critical data and program code.

Detailed and Complete Alternative Models

  1. R1LV0408CSB-5SI#S0: Similar to R1LV0208BSA-5SI#S0 but with double the storage capacity (512K words x 8 bits).
  2. R1LV0108ESA-5SI#S0: A

技術ソリューションにおける R1LV0208BSA-5SI#S0 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of R1LV0208BSA-5SI#S0 in technical solutions:

Q1: What is R1LV0208BSA-5SI#S0? A1: R1LV0208BSA-5SI#S0 is a specific model of synchronous static random-access memory (SRAM) chip.

Q2: What is the capacity of R1LV0208BSA-5SI#S0? A2: R1LV0208BSA-5SI#S0 has a capacity of 2 megabits (256 kilobytes).

Q3: What is the operating voltage range for R1LV0208BSA-5SI#S0? A3: The operating voltage range for R1LV0208BSA-5SI#S0 is typically between 2.7V and 3.6V.

Q4: What is the speed rating of R1LV0208BSA-5SI#S0? A4: R1LV0208BSA-5SI#S0 has a speed rating of 5 nanoseconds (ns) for access time.

Q5: Can R1LV0208BSA-5SI#S0 be used in battery-powered devices? A5: Yes, R1LV0208BSA-5SI#S0 can be used in battery-powered devices as it operates within a low voltage range.

Q6: Is R1LV0208BSA-5SI#S0 suitable for high-speed data processing applications? A6: Yes, R1LV0208BSA-5SI#S0 is designed for high-speed data processing applications due to its fast access time.

Q7: Does R1LV0208BSA-5SI#S0 support multiple read and write operations simultaneously? A7: Yes, R1LV0208BSA-5SI#S0 supports simultaneous read and write operations, making it suitable for multitasking applications.

Q8: Can R1LV0208BSA-5SI#S0 be used in industrial environments with harsh conditions? A8: Yes, R1LV0208BSA-5SI#S0 is designed to withstand industrial environments and can operate reliably under harsh conditions.

Q9: What is the package type of R1LV0208BSA-5SI#S0? A9: R1LV0208BSA-5SI#S0 comes in a small outline integrated circuit (SOIC) package.

Q10: Are there any specific precautions to consider when using R1LV0208BSA-5SI#S0? A10: It is recommended to follow the manufacturer's datasheet and guidelines for proper handling, storage, and usage of R1LV0208BSA-5SI#S0 to ensure optimal performance and reliability.