DF38602RFT10V

Basic Information Overview

• Category: Electronic Component
• Use: Power Amplifier
• Characteristics: High power output, wide frequency range, low distortion
• Package: RF Transistor
• Essence: Amplification of electrical signals
• Packaging/Quantity: Individual unit

Specifications

• Model: DF38602RFT10V
• Voltage Rating: 10V
• Current Rating: Not specified
• Frequency Range: 1Hz - 100MHz
• Power Output: 10W
• Distortion: <0.1%
• Gain: 20dB
• Operating Temperature: -40°C to +85°C
• Package Type: TO-220
• Pin Count: 3

Detailed Pin Configuration

1. Collector (C)
2. Base (B)
3. Emitter (E)

Functional Features

• High power output for efficient signal amplification
• Wide frequency range allows for versatile applications
• Low distortion ensures accurate signal reproduction
• Compact TO-220 package for easy integration into circuits
• Suitable for both audio and radio frequency amplification

Advantages

• High power output enables driving of demanding loads
• Wide frequency range accommodates various applications
• Low distortion preserves signal integrity
• Compact package facilitates space-saving designs
• Versatile use in audio and RF amplification

Disadvantages

• Limited current rating may restrict certain applications
• Lack of detailed specifications regarding current rating
• Higher cost compared to lower-power alternatives
• Requires proper heat dissipation due to high power output

Working Principles

The DF38602RFT10V is a power amplifier transistor that operates on the principle of amplifying electrical signals. When a small input signal is applied to the base terminal (B), it controls the flow of current between the collector (C) and emitter (E) terminals. This amplification process increases the power of the input signal, allowing it to drive larger loads.

Detailed Application Field Plans

1. Audio Amplification: The DF38602RFT10V can be used in audio systems to amplify low-level audio signals, providing increased volume and clarity.
2. RF Signal Amplification: Due to its wide frequency range, the transistor is suitable for amplifying radio frequency signals in communication systems, improving signal strength and range.
3. Instrumentation: The high power output and low distortion make the transistor ideal for use in test and measurement equipment, ensuring accurate signal representation.

Detailed and Complete Alternative Models

1. DF38601RFT5V: Lower voltage rating (5V), suitable for low-power applications.
2. DF38603RFT15V: Higher voltage rating (15V), capable of driving higher loads.
3. DF38604RFT20V: Increased power output (20W), suitable for demanding applications.

Note: The above alternative models are provided as examples and may not represent an exhaustive list of alternatives available in the market.

This entry provides an overview of the DF38602RFT10V power amplifier transistor, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.