2SB315B-CM800DZ-34H

Product Overview

Category

2SB315B-CM800DZ-34H belongs to the category of power transistors.

Use

This product is primarily used in electronic devices and circuits for amplification and switching purposes.

Characteristics

• High power handling capability
• Low saturation voltage
• Fast switching speed
• High current gain
• Excellent thermal stability

Package

The 2SB315B-CM800DZ-34H transistor is available in a TO-3P package, which provides efficient heat dissipation and mechanical strength.

Essence

The essence of this product lies in its ability to handle high power levels while maintaining low saturation voltage and fast switching characteristics.

Packaging/Quantity

The 2SB315B-CM800DZ-34H transistor is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of transistors. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Collector-Base Voltage (Vcbo): 1200V
• Collector-Emitter Voltage (Vceo): 600V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 15A
• Power Dissipation (Pd): 150W
• Transition Frequency (ft): 20MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The 2SB315B-CM800DZ-34H transistor has three pins:

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High power amplification capability
• Efficient switching performance
• Low power dissipation
• Stable operation over a wide temperature range

Advantages

• High power handling capability allows for use in demanding applications
• Low saturation voltage reduces power losses and improves efficiency
• Fast switching speed enables rapid response in switching circuits
• Excellent thermal stability ensures reliable operation under varying temperature conditions

Disadvantages

• Relatively large package size may limit its use in space-constrained designs
• Higher cost compared to smaller, lower-power transistors

Working Principles

The 2SB315B-CM800DZ-34H transistor operates based on the principles of bipolar junction transistor (BJT) technology. It consists of three layers - the emitter, base, and collector - which control the flow of current through the device. By applying a small current or voltage at the base terminal, a larger current can be controlled between the collector and emitter terminals.

Detailed Application Field Plans

The 2SB315B-CM800DZ-34H transistor finds extensive application in various fields, including:

1. Power amplifiers
2. Switching power supplies
3. Motor control circuits
4. Audio amplification systems
5. Industrial automation equipment

Detailed and Complete Alternative Models

Some alternative models that can be considered as replacements for the 2SB315B-CM800DZ-34H transistor include:

1. 2SB1560
2. MJL4281A
3. TIP35C
4. MJE15032
5. BD911

These alternatives offer similar characteristics and performance, providing flexibility in design choices.

In conclusion, the 2SB315B-CM800DZ-34H transistor is a high-power device with excellent characteristics for amplification and switching applications. Its robustness, fast switching speed, and low saturation voltage make it suitable for various electronic circuits and systems.