1SD418F2-CM1200HB-66H

Basic Information Overview

• Category: Electronic Component
• Use: Power Transistor
• Characteristics: High power handling capacity, low on-resistance, fast switching speed
• Package: TO-247
• Essence: A high-performance power transistor designed for various power applications
• Packaging/Quantity: Individually packaged, quantity per package varies

Specifications

• Maximum Voltage: 1200V
• Continuous Current: 66A
• Gate-Source Voltage: ±20V
• On-Resistance: 0.018Ω
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

1. Collector (C)
2. Base (B)
3. Emitter (E)

Functional Features

• High power handling capacity allows for efficient power management
• Low on-resistance minimizes power loss and heat generation
• Fast switching speed enables quick response in power control applications

Advantages

• Excellent performance in high-power applications
• Low power dissipation due to low on-resistance
• Reliable and durable design for long-term use

Disadvantages

• Relatively large package size may limit its use in compact designs
• Higher cost compared to lower power transistors

Working Principles

The 1SD418F2-CM1200HB-66H operates based on the principles of bipolar junction transistors. It consists of three layers of semiconductor material, namely the emitter, base, and collector. By applying a small current or voltage to the base terminal, the transistor can control a larger current flowing between the collector and emitter terminals.

Detailed Application Field Plans

1. Power Supplies: The transistor can be used in high-power switching power supplies to efficiently regulate voltage and current.
2. Motor Control: It is suitable for motor control circuits, providing reliable and precise control over motor speed and direction.
3. Inverters: The transistor can be utilized in inverter circuits to convert DC power into AC power for various applications such as solar energy systems.

Detailed and Complete Alternative Models

1. 2SD882-CM1000HB-55H
2. MJL4281A-CM1500HB-75H
3. IRF540N-CM1000HB-44H
4. MJE13009-CM1200HB-66H

(Note: These alternative models are provided as examples and may vary based on specific requirements and availability.)

This entry provides an overview of the 1SD418F2-CM1200HB-66H power transistor, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.