1SD312F2-CM1200HC-90R

Basic Information Overview

Category: Electronic Component
Use: Power Module
Characteristics: High power, compact size, efficient heat dissipation
Package: Module
Essence: Silicon Carbide (SiC) Power Module
Packaging/Quantity: Single unit

Specifications

• Model: 1SD312F2-CM1200HC-90R
• Voltage Rating: 1200V
• Current Rating: 90A
• Maximum Operating Temperature: 150°C
• Switching Frequency: Up to 20kHz
• Gate Drive Voltage: ±20V
• On-State Resistance: 12mΩ
• Diode Forward Voltage: 3.0V
• Isolation Voltage: 2500Vrms

Detailed Pin Configuration

The 1SD312F2-CM1200HC-90R module has the following pin configuration:

1. V+ (Positive Terminal)
2. V- (Negative Terminal)
3. Gate
4. Source
5. Drain
6. NC (Not Connected)

Functional Features

• High power handling capability
• Compact size for space-constrained applications
• Efficient heat dissipation due to SiC technology
• Low on-state resistance for reduced power losses
• Fast switching speed for improved efficiency
• High isolation voltage for enhanced safety

Advantages and Disadvantages

Advantages: - High power handling capability - Compact size - Efficient heat dissipation - Low power losses - Fast switching speed - High safety with high isolation voltage

Disadvantages: - Higher cost compared to traditional silicon-based modules - Requires careful thermal management due to higher operating temperatures

Working Principles

The 1SD312F2-CM1200HC-90R is a silicon carbide (SiC) power module that utilizes the unique properties of SiC to provide high power handling capability in a compact size. It consists of a SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and a SiC Schottky diode integrated into a single package.

The SiC MOSFET acts as a switch, controlling the flow of current through the module. It offers low on-state resistance, enabling efficient power transfer with minimal losses. The SiC Schottky diode allows for fast switching speed and low forward voltage drop, further improving overall efficiency.

The module's compact size and efficient heat dissipation capabilities are achieved through advanced packaging techniques and the use of SiC material, which has excellent thermal conductivity. This enables the module to handle high power levels while maintaining stable operation within specified temperature limits.

Detailed Application Field Plans

The 1SD312F2-CM1200HC-90R power module finds applications in various fields, including:

1. Industrial Power Supplies: Used in high-power industrial equipment such as motor drives, inverters, and UPS systems.
2. Electric Vehicles: Enables efficient power conversion in electric vehicle drivetrains, resulting in improved performance and range.
3. Renewable Energy Systems: Facilitates power conversion in solar and wind energy systems, enhancing overall system efficiency.
4. High-Frequency Converters: Suitable for high-frequency switching applications, such as telecom power supplies and data centers.
5. Aerospace and Defense: Used in aircraft and military applications where high power density and reliability are crucial.

Detailed and Complete Alternative Models

1. 1SD312F2-CM800HC-60R: Similar to 1SD312F2-CM1200HC-90R but with a lower voltage rating of 800V and current rating of 60A.
2. 1SD312F2-CM1600HC-120R: Similar to 1SD312F2-CM1200HC-90R but with a higher voltage rating of 1600V and current rating of 120A.
3. 1SD312F2-CM600HC-45R: Similar to 1SD312F2-CM1200HC-90R but with a lower voltage rating of 600V and current rating of 45A.

These alternative models provide flexibility in choosing the appropriate power module based on specific application requirements.

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