UNR921CG0L

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: High voltage, high current, low power consumption
Package: TO-220AB
Essence: NPN Silicon Epitaxial Planar Transistor
Packaging/Quantity: Bulk packaging, 50 transistors per pack

Specifications

• Collector-Emitter Voltage (VCEO): 200V
• Collector Current (IC): 5A
• Power Dissipation (PD): 40W
• DC Current Gain (hFE): 30 to 320
• Transition Frequency (fT): 3MHz

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High voltage capability
• Low saturation voltage
• Complementary to UPR921CG0L

Advantages and Disadvantages

Advantages: - High voltage and current ratings - Low power consumption - Wide range of DC current gain

Disadvantages: - Limited transition frequency - Bulk packaging may not be suitable for all applications

Working Principles

The UNR921CG0L operates as a bipolar junction transistor, utilizing the movement of charge carriers within a semiconductor to amplify or switch electronic signals. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals.

Detailed Application Field Plans

The UNR921CG0L is commonly used in audio amplifiers, power supply circuits, and electronic control systems. Its high voltage and current capabilities make it suitable for applications requiring robust signal amplification and switching.

Detailed and Complete Alternative Models

• UNR921DG0L
• UNR921EG0L
• UNR921FG0L

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This entry provides comprehensive information about the UNR921CG0L transistor, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.