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NTMD6601NR2G
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NTMD6601NR2G

Product Overview

Category

The NTMD6601NR2G belongs to the category of semiconductor devices.

Use

It is used as a power MOSFET for various electronic applications.

Characteristics

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Low on-resistance

Package

The NTMD6601NR2G is available in a TO-252-3 package.

Essence

This product is essential for power management and control in electronic circuits.

Packaging/Quantity

It is typically packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 6.6A
  • On-Resistance (RDS(on)): 0.045 ohms
  • Gate-Source Voltage (VGS): ±20V
  • Total Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The NTMD6601NR2G has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various applications
  • Low gate charge enables fast switching
  • Low on-resistance minimizes power loss

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Fast switching speed
  • Low on-resistance

Disadvantages

  • May require additional circuitry for certain applications
  • Sensitivity to overvoltage conditions

Working Principles

The NTMD6601NR2G operates by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow through it, enabling power management and control in electronic circuits.

Detailed Application Field Plans

The NTMD6601NR2G is commonly used in the following applications: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the NTMD6601NR2G include: - NTMD6N02R2G - NTMD6P02R2G - NTMD6N03R2G - NTMD6P03R2G

In conclusion, the NTMD6601NR2G is a versatile power MOSFET with high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of electronic applications.

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技術ソリューションにおける NTMD6601NR2G の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure, here are 10 common questions and answers related to the application of NTMD6601NR2G in technical solutions:

  1. What is the maximum drain current of NTMD6601NR2G?

    • The maximum drain current of NTMD6601NR2G is 6.6A.

  2. What is the typical on-resistance of NTMD6601NR2G?

    • The typical on-resistance of NTMD6601NR2G is 16mΩ.

  3. What is the gate threshold voltage of NTMD6601NR2G?

    • The gate threshold voltage of NTMD6601NR2G is typically 1V.

  4. What is the maximum power dissipation of NTMD6601NR2G?

    • The maximum power dissipation of NTMD6601NR2G is 2.5W.

  5. What is the operating temperature range of NTMD6601NR2G?

    • The operating temperature range of NTMD6601NR2G is -55°C to 150°C.

  6. Is NTMD6601NR2G suitable for automotive applications?

    • Yes, NTMD6601NR2G is designed for automotive applications.

  7. What type of package does NTMD6601NR2G come in?

    • NTMD6601NR2G comes in a DPAK (TO-252) package.

  8. Can NTMD6601NR2G be used in switching power supplies?

    • Yes, NTMD6601NR2G is suitable for use in switching power supplies.

  9. Does NTMD6601NR2G have built-in ESD protection?

    • Yes, NTMD6601NR2G features built-in ESD protection.

  10. What are some typical applications for NTMD6601NR2G?

    • Typical applications for NTMD6601NR2G include motor control, DC-DC converters, and load switching in automotive and industrial systems.

I hope these questions and answers are helpful for your technical solutions involving NTMD6601NR2G! If you have any more specific questions, feel free to ask.