NTD110N02R-001G

Product Overview

Category

The NTD110N02R-001G belongs to the category of power MOSFETs.

Use

It is used for power management and switching applications in various electronic devices and systems.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The NTD110N02R-001G is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power control and management in electronic circuits.

Packaging/Quantity

It is usually packaged in reels or tubes, with varying quantities depending on the supplier.

Specifications

• Drain-Source Voltage (VDS): 24V
• Continuous Drain Current (ID): 60A
• RDS(ON) (Max) @ VGS = 10V: 8.5mΩ
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 40nC

Detailed Pin Configuration

The NTD110N02R-001G has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability allows it to handle large loads.
• Low on-resistance minimizes power loss and heat generation.
• Fast switching speed enables efficient power control.

Advantages

• Efficient power management
• Suitable for high-current applications
• Low power dissipation

Disadvantages

• Sensitive to static electricity
• Requires careful handling during installation

Working Principles

The NTD110N02R-001G operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is commonly used in: - Power supplies - Motor control - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

• NTD110N02RT4G
• NTD110N02R-001
• NTD110N02RG

In conclusion, the NTD110N02R-001G is a versatile power MOSFET with high voltage capability and fast switching speed, making it suitable for a wide range of power management and switching applications.

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