ON Semiconductor
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
NSVT3904DXV6T1G
詳細を表示 DataSheets

NSVT3904DXV6T1G

Introduction

The NSVT3904DXV6T1G is a semiconductor product belonging to the category of NPN Bipolar Transistors. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

  • Category: NPN Bipolar Transistor
  • Use: Amplification and switching applications
  • Characteristics: High current gain, low saturation voltage
  • Package: SOT-563 (SC-88)
  • Essence: Small signal transistor
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (VCBO): 40V
  • Collector-Emitter Voltage (VCEO): 40V
  • Emitter-Base Voltage (VEBO): 5V
  • Continuous Collector Current (IC): 200mA
  • Power Dissipation (PD): 225mW
  • Transition Frequency (fT): 300MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The NSVT3904DXV6T1G has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High current gain
  • Low noise
  • Fast switching speed
  • Small footprint

Advantages and Disadvantages

Advantages

  • Suitable for high-speed switching applications
  • Compact package size
  • Low power consumption

Disadvantages

  • Limited maximum collector current compared to other transistors in the same category
  • Relatively low breakdown voltage

Working Principles

The NSVT3904DXV6T1G operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

This transistor is commonly used in various electronic circuits such as audio amplifiers, signal processing circuits, and digital logic circuits. Its small size and fast switching speed make it suitable for portable electronic devices and high-frequency applications.

Detailed and Complete Alternative Models

  • 2N3904: Similar NPN transistor with a different package (TO-92)
  • BC547: Another NPN transistor with comparable characteristics but a different package (TO-92)

In conclusion, the NSVT3904DXV6T1G is a versatile NPN Bipolar Transistor suitable for amplification and switching applications, offering high current gain and low saturation voltage. Its compact package and functional features make it ideal for various electronic circuits, despite having limitations in maximum collector current and breakdown voltage.

Word Count: 366

技術ソリューションにおける NSVT3904DXV6T1G の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is NSVT3904DXV6T1G?

    • NSVT3904DXV6T1G is a small signal NPN bipolar junction transistor (BJT) commonly used in electronic circuits for amplification and switching purposes.

  2. What are the key specifications of NSVT3904DXV6T1G?

    • The key specifications of NSVT3904DXV6T1G include a maximum collector current of 200mA, a maximum collector-emitter voltage of 40V, and a maximum power dissipation of 300mW.

  3. How can NSVT3904DXV6T1G be used in amplifier circuits?

    • NSVT3904DXV6T1G can be used as a basic building block in amplifier circuits to amplify small signals such as audio or sensor inputs.

  4. In what types of applications is NSVT3904DXV6T1G commonly used?

    • NSVT3904DXV6T1G is commonly used in audio amplifiers, signal processing circuits, sensor interfaces, and general purpose switching applications.

  5. What are the typical operating conditions for NSVT3904DXV6T1G?

    • The typical operating conditions for NSVT3904DXV6T1G include a collector current of 10mA to 100mA, a collector-emitter voltage of 20V, and a base current of 1mA to 10mA.

  6. Can NSVT3904DXV6T1G be used in low-power applications?

    • Yes, NSVT3904DXV6T1G is suitable for low-power applications due to its low collector current and power dissipation ratings.

  7. What are the recommended biasing configurations for NSVT3904DXV6T1G?

    • Common biasing configurations for NSVT3904DXV6T1G include fixed bias, emitter bias, and voltage divider bias depending on the specific application requirements.

  8. Are there any alternative transistors that can be used in place of NSVT3904DXV6T1G?

    • Yes, alternative transistors with similar characteristics such as 2N3904, BC547, and PN2222A can be used as substitutes for NSVT3904DXV6T1G in many applications.

  9. What are the thermal considerations for NSVT3904DXV6T1G in high-power applications?

    • In high-power applications, proper heat sinking and thermal management should be considered to ensure that the transistor operates within its specified temperature limits.

  10. Where can I find detailed application notes and reference designs for using NSVT3904DXV6T1G in technical solutions?

    • Detailed application notes and reference designs for NSVT3904DXV6T1G can be found in the manufacturer's datasheets, application guides, and online technical resources.