NSVMUN5113DW1T3G Product Overview

Introduction

The NSVMUN5113DW1T3G is a semiconductor product belonging to the category of power transistors. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Power Transistors
• Use: Amplification and switching of electrical signals in various electronic circuits.
• Characteristics: High voltage and current handling capabilities, low on-state resistance, and fast switching speed.
• Package: TO-252-3 (DPAK)
• Essence: The NSVMUN5113DW1T3G is designed for high-power applications where efficient signal amplification and switching are required.
• Packaging/Quantity: Typically available in reels or tubes containing multiple units.

Specifications

• Voltage Rating: 100V
• Current Rating: 5A
• Power Dissipation: 2W
• Operating Temperature Range: -55°C to 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3 (DPAK)

Detailed Pin Configuration

The NSVMUN5113DW1T3G follows the standard pin configuration for the TO-252-3 (DPAK) package: 1. Source 2. Gate 3. Drain

Functional Features

• High voltage capability
• Low on-state resistance
• Fast switching speed
• Enhanced thermal performance

Advantages and Disadvantages

Advantages

• Suitable for high-power applications
• Efficient signal amplification and switching
• Enhanced thermal performance

Disadvantages

• May require additional heat sinking in high-power applications
• Sensitive to overvoltage conditions

Working Principles

The NSVMUN5113DW1T3G operates based on the principles of field-effect transistor (FET) technology. When a voltage is applied to the gate terminal, it controls the flow of current between the source and drain terminals, allowing for signal amplification and switching.

Detailed Application Field Plans

The NSVMUN5113DW1T3G is commonly used in the following application fields: - Switching power supplies - Motor control circuits - Audio amplifiers - LED lighting systems - DC-DC converters

Detailed and Complete Alternative Models

• NSVMUN5113DW1T3G: 100V, 5A, TO-252-3 (DPAK) package
• NSVMUN5114DW1T3G: 120V, 5A, TO-252-3 (DPAK) package
• NSVMUN5115DW1T3G: 150V, 5A, TO-252-3 (DPAK) package

In summary, the NSVMUN5113DW1T3G is a high-performance power transistor suitable for a wide range of high-power electronic applications, offering efficient signal amplification and switching capabilities.

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