ON Semiconductor
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
NGTB50N60L2WG
詳細を表示 DataSheets

NGTB50N60L2WG

Product Overview

  • Category: Power semiconductor device
  • Use: Used in power electronics applications
  • Characteristics: High voltage, low on-state resistance, high switching speed
  • Package: TO-247
  • Essence: N-channel IGBT (Insulated Gate Bipolar Transistor)
  • Packaging/Quantity: Typically packaged individually

Specifications

  • Voltage Rating: 600V
  • Current Rating: 50A
  • Switching Frequency: Up to 20kHz
  • On-State Voltage: 1.8V
  • Thermal Resistance: 0.5°C/W

Detailed Pin Configuration

The NGTB50N60L2WG typically has three pins: 1. Collector (C) 2. Gate (G) 3. Emitter (E)

Functional Features

  • High voltage capability
  • Low saturation voltage
  • Fast switching speed
  • Good thermal performance

Advantages and Disadvantages

Advantages

  • Suitable for high power applications
  • Low conduction losses
  • Fast switching times

Disadvantages

  • Higher cost compared to other power devices
  • More complex drive circuitry required

Working Principles

The NGTB50N60L2WG operates based on the principles of an IGBT, which combines the advantages of MOSFETs and bipolar transistors. It can be turned on and off by applying a gate voltage, allowing control of high power circuits.

Detailed Application Field Plans

The NGTB50N60L2WG is commonly used in: - Motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Induction heating

Detailed and Complete Alternative Models

Some alternative models to NGTB50N60L2WG include: - IRG4PH40UD - FGA25N120ANTD - STGW30NC60WD

In conclusion, the NGTB50N60L2WG is a high-performance power semiconductor device suitable for various power electronics applications, offering high voltage capability, low on-state resistance, and fast switching speed. Its main application fields include motor drives, UPS, renewable energy systems, and induction heating.

[Word count: 298]

技術ソリューションにおける NGTB50N60L2WG の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is NGTB50N60L2WG?

    • NGTB50N60L2WG is a 600V, 50A IGBT (Insulated Gate Bipolar Transistor) designed for high power switching applications.

  2. What are the key features of NGTB50N60L2WG?

    • The key features include low VCE(sat), fast switching speed, high current capability, and ruggedness for reliable performance in various technical solutions.

  3. What are the typical applications of NGTB50N60L2WG?

    • NGTB50N60L2WG is commonly used in motor drives, induction heating, UPS (Uninterruptible Power Supplies), and power supplies.

  4. What is the maximum operating temperature of NGTB50N60L2WG?

    • The maximum operating temperature of NGTB50N60L2WG is typically around 150°C.

  5. What is the gate-emitter voltage of NGTB50N60L2WG?

    • The gate-emitter voltage of NGTB50N60L2WG is typically around ±20V.

  6. Does NGTB50N60L2WG require a heatsink for operation?

    • Yes, NGTB50N60L2WG typically requires a heatsink to dissipate heat generated during operation, especially in high-power applications.

  7. What is the recommended gate resistor value for NGTB50N60L2WG?

    • A typical recommended gate resistor value for NGTB50N60L2WG is around 10 ohms to control the switching speed and reduce EMI (Electromagnetic Interference).

  8. Can NGTB50N60L2WG be used in parallel configurations for higher current applications?

    • Yes, NGTB50N60L2WG can be used in parallel configurations to increase the overall current handling capability in high-power solutions.

  9. What are the protection features available in NGTB50N60L2WG?

    • NGTB50N60L2WG may include built-in features such as short-circuit protection, overcurrent protection, and thermal shutdown to enhance system reliability.

  10. Is there a specific application note or reference design available for using NGTB50N60L2WG in a particular technical solution?

    • Yes, application notes and reference designs are often provided by the manufacturer to guide engineers in implementing NGTB50N60L2WG in specific technical solutions.