Category: Semiconductor
Use: Power Transistor
Characteristics: High voltage, low on-resistance
Package: TO-252-3 (DPAK)
Essence: N-channel MOSFET
Packaging/Quantity: Tape & Reel, 2500 units
Advantages: - High voltage capability - Low on-resistance - RoHS compliant
Disadvantages: - Limited current rating - Moderate power dissipation
The NDT01N60T1G is a high-voltage N-channel MOSFET designed for power applications. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals.
This completes the entry for NDT01N60T1G, providing comprehensive information about its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
What is NDT01N60T1G?
What are the key features of NDT01N60T1G?
What are the typical applications of NDT01N60T1G?
What is the maximum voltage rating for NDT01N60T1G?
What is the typical on-resistance of NDT01N60T1G?
What is the gate charge of NDT01N60T1G?
What is the operating temperature range for NDT01N60T1G?
Is NDT01N60T1G RoHS compliant?
What are the recommended mounting techniques for NDT01N60T1G?
Where can I find the detailed datasheet for NDT01N60T1G?