NB3F8L3010CMNG

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification and Switching
Characteristics: High Gain, Low Noise, Fast Switching Speed
Package: SMD (Surface Mount Device)
Essence: NPN Bipolar Junction Transistor
Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications and Parameters

Collector Current (IC): 100mA
Collector-Emitter Voltage (VCEO): 30V
Emitter-Base Voltage (VEBO): 5V
Power Dissipation (PD): 200mW
Transition Frequency (fT): 250MHz
Operating Temperature Range: -55°C to +150°C

Detailed and Complete Pin Configuration

Base (B)
Emitter (E)
Collector (C)

Functional Characteristics

High current gain (hFE)
Low noise figure
Fast switching speed
Suitable for low-power applications
Wide operating temperature range

Advantages and Disadvantages

Advantages: - High gain allows for signal amplification - Low noise figure ensures minimal distortion - Fast switching speed enables rapid switching between states - Suitable for low-power applications, conserving energy - Wide operating temperature range allows for versatile use

Disadvantages: - Limited maximum collector current (100mA) - Restricted maximum collector-emitter voltage (30V) - Relatively low power dissipation capability (200mW)

Applicable Range of Products

Audio Amplifiers
RF Amplifiers
Switching Circuits
Oscillators
Logic Gates

Working Principles

The NB3F8L3010CMNG is an NPN bipolar junction transistor. It consists of three layers of semiconductor material, namely the emitter, base, and collector. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals. This allows for signal amplification and switching.

Detailed Application Field Plans

Audio Amplifiers: The transistor can be used to amplify weak audio signals, enhancing sound quality.
RF Amplifiers: It is suitable for amplifying radio frequency signals in communication systems.
Switching Circuits: The fast switching speed makes it ideal for digital switching applications.
Oscillators: The transistor can be utilized in oscillator circuits to generate stable oscillations.
Logic Gates: It can be incorporated into logic gate circuits for digital signal processing.

Detailed Alternative Models

NB3F8L3010CMN
NB3F8L3010CNG
NB3F8L3010CMNP
NB3F8L3010CMNPG

5 Common Technical Questions and Answers

Q: What is the maximum collector current of NB3F8L3010CMNG? A: The maximum collector current is 100mA.
Q: What is the operating temperature range of this transistor? A: The operating temperature range is -55°C to +150°C.
Q: Can NB3F8L3010CMNG be used in high-power applications? A: No, it is more suitable for low-power applications due to its limited power dissipation capability.
Q: What is the purpose of the base terminal in this transistor? A: The base terminal controls the flow of current between the collector and emitter terminals, allowing for signal amplification and switching.
Q: Is NB3F8L3010CMNG compatible with logic gate circuits? A: Yes, it can be integrated into logic gate circuits for digital signal processing.